Kioxia breaks ground for new 3D NAND wafer fab

Jessie Shen, DIGITIMES, Taipei 0

Kioxia held a groundbreaking ceremony for a semiconductor fabrication facility, dubbed Fab 7, at its factory site in Yokkaichi, Japan on February 24. The facility will be dedicated to the production of 3D NAND flash memory.

The construction of Fab 7 will be divided into two phases, with the first phase scheduled to be completed by spring 2022, according to the company.

Kioxia also noted that the new fab will be owned and invested jointly with Western Digital (WD), its longtime partner. The pair will continue their joint venture investments for the Fab 7, including the creation of sixth-generation 3D flash memory, Kioxia continued.

Kioxia and WD announced recently their joint development of sixth-generation, 162-layer 3D flash memory technology, and detailed the related innovations in a joint presentation at the ISSCC 2021 show earlier this month.