Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.

SK Hynix has announced the company completed recently the development of enterprise SATA SSDs built using its 72-layer 512Gb 3D NAND flash chips. SK Hynix combined the 72-layer 512Gb 3D NAND flash with its in-house developed firmware and controller to provide the maximum density of 4TB, and makes the most of its 72-layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips. A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB, according to the vendor. The new eSSD supports sequential read and write speed of up to 560MB/s and 515MB/s, respectively, and can perform 98,000 random read IOPS (input/output operations per second) and 32,000 random write IOPS. SK Hynix also improved the esSSD read latency.

Samsung has announced a 1Tb V-NAND chip that it expects to be available next year. Since first mentioning it in 2013, during unveiling of the industry's first 3D NAND, Samsung has been working to enable its core memory technologies to realize one terabit of capacity on a single chip using a V-NAND structure. The arrival of a 1Tb V-NAND chip next year will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies and will represent one of the most important memory advances of the past decade. "Our new, highly advanced V-NAND technologies will offer smarter solutions for greater value by providing high data processing speeds, increased system scalability and ultra-low latency for today's most VP and head of Memory Business at Samsung Electronics. "We will continue to pioneer flash innovation by leveraging our expertise in advanced 3D-NAND memory technology to significantly enhance the way in which information-rich data is processed."