SK Hynix has announced the company completed recently the development of enterprise SATA SSDs built using its 72-layer 512Gb 3D NAND flash chips. SK Hynix combined the 72-layer 512Gb 3D NAND flash with its in-house developed firmware and controller to provide the maximum density of 4TB, and makes the most of its 72-layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips. A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB, according to the vendor. The new eSSD supports sequential read and write speed of up to 560MB/s and 515MB/s, respectively, and can perform 98,000 random read IOPS (input/output operations per second) and 32,000 random write IOPS. SK Hynix also improved the esSSD read latency.

Micron Technology has launched the Micron 5200 series of SATA solid state drives (SSD). Built on Micron's new 64-layer 3D NAND technology, the Micron 5200 series of SSDs offers a SATA platform for virtualized workloads. The Micron 5200 series is engineered to deliver an enterprise storage solution to replace existing hard drives and legacy SSDs. Micron 5200 SSDs deliver better total cost of ownership and improve data center efficiency through server and storage platform consolidation, reducing IT costs and simplifying infrastructure and maintenance, Micron said. Micron 5200 SSDs are available now for OEM qualification and for purchase through distributors, such as ASI, Avnet, CDW, Ingram, Microland, WPG-Americas, Synnex and others.

Samsung has announced a 1Tb V-NAND chip that it expects to be available next year. Since first mentioning it in 2013, during unveiling of the industry's first 3D NAND, Samsung has been working to enable its core memory technologies to realize one terabit of capacity on a single chip using a V-NAND structure. The arrival of a 1Tb V-NAND chip next year will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies and will represent one of the most important memory advances of the past decade. "Our new, highly advanced V-NAND technologies will offer smarter solutions for greater value by providing high data processing speeds, increased system scalability and ultra-low latency for today's most VP and head of Memory Business at Samsung Electronics. "We will continue to pioneer flash innovation by leveraging our expertise in advanced 3D-NAND memory technology to significantly enhance the way in which information-rich data is processed."