China is moving aggressively into the high-performance DRAM market dominated by Samsung Electronics and SK Hynix, with its sights set on customized high-bandwidth memory (HBM). The push for self-sufficiency is forcing South Korea's chipmakers to rethink the risks of China's differentiated strategy.
Huawei unveils proprietary HBM with bold performance claims
According to Yonhap News Agency and Seoulwire, Huawei aims to release its Ascend 950 PR AI processor in the first quarter of 2026, paired with its in-house HBM chip, branded "HiBL 1.0."
Huawei said HiBL 1.0 delivers 128GB of capacity and a peak bandwidth of 1.6TB/s, outperforming the 1.2TB/s of fifth-generation 12-layer HBM3E from Samsung and SK Hynix. It stressed the chip was designed to unlock the full performance of the Ascend 950 PR.
Korean industry disputes performance parity
South Korean industry experts counter that HiBL 1.0 is closer to fourth-generation HBM3. They argue Huawei's memory technology still lags Samsung, SK Hynix, and Micron by one to two generations, making HBM3E-class performance unrealistic for now.
Even so, Korean executives warn that China is advancing with a "team strategy," pooling resources across the semiconductor chain. Huawei's custom HBM, tailored for its own AI chips, could pose a direct threat once it launches in 2026.
Customization emerges as next battleground
Samsung and SK Hynix have both predicted that HBM demand will shift to customized solutions and plan to start client-specific production with HBM4, signaling customization as the next battleground in the memory race.
Chinese firms have rolled out AI processors in the past, but lacking HBM support, most have hit performance bottlenecks. Analysts say Huawei's entry into custom HBM marks a milestone that could help China's chip sector overcome those limits.
Roadmap signals escalating ambitions
Huawei is expected to expand its HBM portfolio across AI product lines. The Ascend 950 DT, due in the fourth quarter of 2026, will feature the upgraded HiZQ 2.0 with bandwidth raised to 4TB/s.
Observers note that Huawei's 5nm and 7nm chip development, combined with its HBM roadmap, underscores its intent to challenge memory leaders. By publishing its technology blueprint, Huawei is signaling ambitions that Korean rivals find increasingly threatening.
With Samsung and SK Hynix also targeting customized HBM, the battle between Chinese and Korean players in next-generation memory is set to intensify.
Separately, China's top DRAM maker CXMT is progressing rapidly in HBM. SemiAnalysis expects it could mass-produce HBM3E as early as 2026—sooner than most forecasts—and narrow the gap with Samsung and SK Hynix faster than anticipated.
Article translated by Levi Li and edited by Jerry Chen
