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NEWS TAGGED DRAM
Thursday 18 December 2025
SK hynix First to Complete Intel Data Center Certification for 256GB DDR5 RDIMM

Seoul, December 18, 2025 – SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has become the first in the industry to complete the Intel...

Thursday 18 December 2025
Micron hikes FY26 capex to US$20b to accelerate HBM and US fab output
Micron Technology is ramping up capital spending to address tightening memory supply, raising fiscal 2026 capex to about US$20 billion as it accelerates investments in high-bandwidth...
Thursday 18 December 2025
Micron's blowout quarter underscores tightening memory supply and rising AI leverage
Micron Technology's latest financial results point to a deepening structural upswing in the memory market, with AI-driven demand pushing pricing, margins, and investment plans higher,...
Tuesday 16 December 2025
Apple braces for DRAM cost surge as Korean suppliers reprice contracts
Apple is facing renewed cost pressure as its long-term DRAM supply contracts with South Korean memory makers approach expiry in January 2026, heightening concerns that higher component...
Monday 15 December 2025
Micron's DDR5 outsourcing ramp redraws memory packaging trajectories through 2026
Memory demand remains overheated and supply tight, driving upstream manufacturers to lift utilization while majors such as Micron pivot toward customized, higher value-added output...
Monday 15 December 2025
SK Hynix reportedly eyes specialty DRAM manufacturing to fend off China memory surge
SK Hynix's rumored plan to enter low-power DRAM contract manufacturing for the first time is drawing industry attention, amid speculation that the move is driven by intensifying competition...
Friday 12 December 2025
Samsung reportedly accelerates Pyeongtaek expansion to ramp up HBM4 and 1c DRAM production

Samsung Electronics is reportedly accelerating construction at its Pyeongtaek semiconductor complex to expand production of next-generation...

Friday 12 December 2025
Samsung's TM Roh to reportedly hold surprise CES meeting with Micron CEO on DRAM supply
Samsung Electronics is reportedly preparing for urgent negotiations with Micron Technology at CES 2026 in Las Vegas, as surging mobile DRAM prices and tightening supply threaten to...
Tuesday 9 December 2025
Samsung moves up Pyeongtaek Phase 4 timeline in aggressive HBM4 push
Samsung Electronics, fresh off completing sixth-generation HBM4 development, is reportedly accelerating DRAM capacity expansion in a renewed effort to reclaim leadership in AI memo...
Tuesday 9 December 2025
SK Hynix pivots to general-purpose DRAM with tenfold 1c capacity surge
Rumors have risen that SK Hynix is accelerating the expansion of its 10nm-class sixth-generation 1c DRAM capacity. Previously, to concentrate on producing high-bandwidth memory (HBM),...
Tuesday 9 December 2025
Samsung's HBM4 edge fuels foundry recovery
Samsung Electronics, with its sixth-generation high-bandwidth memory (HBM4), uses base dies produced by Samsung Foundry. As Samsung's HBM4 competitiveness rises, the market expects...
Monday 8 December 2025
Samsung reportedly gains momentum in foundry and memory with improved 4nm yields
Samsung Electronics is reportedly gaining momentum across its foundry and memory operations as higher yields on its 4nm process and a broad recovery in DRAM demand position the company...
Monday 8 December 2025
Weekly news roundup:Intel hires TSMC veteran, Samsung reportedly wins TPU HBM4 order
These are the most-read DIGITIMES Asia stories in the week of December 1 to December 7, 2025.
Monday 8 December 2025
Samsung shifts focus from HBM to DDR5 modules for higher profits
Samsung Electronics has shifted its internal strategy in response to intensified HBM market competition**,** reallocating capacity toward DDR5 RDIMM modules and freeing up around...
Sunday 7 December 2025
Taiwan's ESMT sees memory upturn accelerating as pricing gains roll into 4Q25
Tight memory supply has lifted prices across product lines, allowing Elite Semiconductor Microelectronics Technology (ESMT) to break a two-quarter losing streak in the third quarter...