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NEWS TAGGED DRAM
Friday 26 May 2023
Global DRAM revenue continues slide in 1Q23
Revenue of the global DRAM memory market registered a sequential decline for the third consecutive quarter in the first quarter of 2023, according to TrendForce.
Thursday 25 May 2023
DRAM chipmaker Nanya lands influx of short lead-time orders for TV applications
Nanya Technology has recently received an influx of short lead-time orders for TV applications, according to the DRAM memory maker.
Wednesday 24 May 2023
Samsung, SK Hynix may eventually suffer more than benefit from Micron sanction
With China formally imposing sanctions on Micron Technology, possible consequent impacts on Samsung Electronics and SK Hynix are fast drawing market concerns, and both Korean suppliers...
Tuesday 23 May 2023
Backend firms may see Micron cut orders in the wake of Chinese ban
Taiwan-based backend houses, which handle mainly conventional DRAM memory from Micron Technology, may experience a reduction in orders from the US customer due to China's prohibition...
Friday 19 May 2023
Samsung starts mass production 12nm DDR5 DRAM
Samsung Electronics has announced mass production of 16-gigabit (Gb) DDR5 DRAM chips built using the company's 12nm-class process technology.
Thursday 18 May 2023
Micron to produce EUV DRAM memory in Japan
Micron Technology has announced that it will introduce extreme ultraviolet (EUV) technology to Japan, utilizing this advanced patterning technology to produce its next generation...
Wednesday 17 May 2023
Memory demand poised to recover, says Etron chairman
The memory market has been showing signs of improvement and is anticipated to fully recover by the end of this year, according to Nicky Lu, chairman of memory IC design house Etron...
Tuesday 16 May 2023
Samsung develops DRAM supporting CXL 2.0
Samsung Electronics has developed what the company claims is the industry's first 128-gigabyte (GB) DRAM to support Compute Express Link (CXL) 2.0. Intel and Samsung collaborated...
Monday 15 May 2023
DRAM and NAND flash prices to fall further in 2Q23
According to TrendForce, DRAM and NAND Flash prices are expected to fall further in the second quarter of 2023 due to weak server shipments and high inventory levels.
Tuesday 9 May 2023
Neo Semiconductor develops 3D NAND-like DRAM
Neo Semiconductor has announced the release of 3D X-DRAM, the world's first 3D NAND-like DRAM, which the company believes would eliminate DRAM's capacity issue and replace the entire...
Tuesday 9 May 2023
Memory market emerging from slump
The memory chip market is coming out of its slump, with server and PC applications driving the recovery, according to sources at memory module makers.
Monday 8 May 2023
Winbond swings to loss in 1Q23
Winbond Electronics, a maker of specialty DRAM and flash memory, swung to its first quarterly loss in three years.
Friday 5 May 2023
AP Memory to expand AI memory biz
AP Memory Technology, which specializes in customized IoT RAM and other DRAM memory, will extend its AI memory business by entering the HPC area, according to company president Wen...
Thursday 4 May 2023
Nanya revenue increases for 2nd consecutive month
DRAM maker Nanya Technology's revenue increased for the second consecutive month in April.
Thursday 27 April 2023
Samsung says 1b DRAM production almost ready
Samsung Electronics has disclosed that preparations for volume production of 1b DRAM (12nm) are approaching the final stages.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.