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NEWS TAGGED DRAM
Friday 14 August 2026
Memory supply crunch pushes long-term contracts beyond the big three
The global memory supply shortage is intensifying, with long-term agreements (LTAs) rapidly expanding beyond the three major memory manufacturers—Samsung Electronics, SK hynix,...
Friday 14 August 2026
Samsung weighs moving legacy memory backend work to Vietnam to free up capacity for HBM
Samsung Electronics may move part of the general-purpose DRAM and NAND packaging and testing now handled at its Cheonan and Onyang sites in South Korea to Vietnam, potentially freeing...
Friday 14 August 2026
Intel tests system memory to ease AI KV-cache pressure
Intel tests presented at the OCP APAC Summit 2026 that moving the key-value cache used in large language model (LLM) inference from GPU memory to system DRAM can raise serving throughput...
Thursday 13 August 2026
SK Hynix expands EUV roadmap with High-NA tools and PSM adoption
SK hynix said it is advancing its use of extreme ultraviolet (EUV) lithography for the mass production of next-generation DRAM, with high-numerical-aperture (High-NA) EUV equipment...
Thursday 13 August 2026
Intel signals memory push after hiring former SK Hynix CEO

Intel is signaling a broader push into next-generation memory technologies, with CEO Lip-Bu Tan revealing that the company is exploring...

Wednesday 12 August 2026
CXMT DDR5 yield tops 90%, narrowing gap with Samsung

China's leading DRAM maker CXMT has reportedly raised its DDR5 production yield above 90%, narrowing the gap with Samsung Electronics...

Wednesday 12 August 2026
Fudan's single-electron memory breakthrough opens new path for 2D chip scaling
China's effort to advance memory technology has gained a new research avenue, with a Fudan University team developing a room-temperature single-electron non-volatile memory device...
Wednesday 12 August 2026
Samsung HBM4 yield nears 80% in push to rival SK Hynix

Samsung Electronics' production yield for its sixth-generation high-bandwidth memory, HBM4, has reportedly approached 80%, marking a...

Wednesday 12 August 2026
Nvidia denies Rubin Ultra downgrade, cites flexible SKUs

Amid a swirl of rumors that Nvidia chip upgrades were being cut, scaled back, or delayed, the company has again pushed back on similar...

Tuesday 11 August 2026
Memory drives 62% of Nvidia Vera Rubin's cost — SOCAMM2, not HBM4, leads the bill

Memory chips account for roughly 62% of the cost of Nvidia's next-generation AI platform, Vera Rubin, according to a new cost breakdown...

Tuesday 11 August 2026
Memory crunch pushes Apple toward China—and into Washington's security dilemma

Apple's unusual interest in testing CXMT memory and redirecting part of its procurement toward China has rattled Washington, given...

Tuesday 11 August 2026
Samsung tackles AI memory wall with zHBM, V10 BV-NAND concepts

Samsung Electronics is betting on new 3D memory architectures and tighter processor-memory integration as AI workloads put growing pressure...

Monday 10 August 2026
Samsung HBM4 yield nears 80% as production race with SK Hynix heats up

Samsung Electronics has reportedly pushed the production yield of its sixth-generation high-bandwidth memory (HBM4) close to 80%, marking...

Monday 10 August 2026
Apple tests CXMT memory chips as shortage, price pressures persist

Apple has tested DRAM from China's ChangXin Memory Technologies in iPhone and MacBook products as AI-driven memory shortages and rising...

Monday 10 August 2026
SK Hynix faces US patent fight over HBM, 3D NAND

SK Hynix is facing an expanding US patent dispute with MonolithIC 3D. A second US International Trade Commission (USITC) investigation...