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NEWS TAGGED DRAM
Friday 13 May 2022
The memory industy (5): Looking for a new biz model that can create new value
When the memory industry can no longer leverage Moore's Law to create new value, it has to find new technologies to establish a new business model that can create new economic valu...
Thursday 12 May 2022
The memory industry (4): Technology diversion between DRAM and 3D NAND flash
In 2014, 3D NAND flash was introduced to the industry with 24 layers, and it co-existed with 2D NAND flash until 2017. 3D NAND flash gradually came to dominate the market with its...
Thursday 12 May 2022
Winbond to enjoy revenue growth in 2Q22
Despite recent falls in memory chip prices, Winbond Electronics is poised to generate sequential revenue growth in the second quarter of 2022, according to market sources.
Wednesday 11 May 2022
The memory industry (3): Taiwan's DRAM sector
Let's take a moment to review the rise and fall of Taiwan's DRAM industry. Taiwan's DRAM industry came into being in the mid-1990s. In the beginning, although some companies wanted...
Tuesday 10 May 2022
The memory industry (2): The era of makers utilizing manufacturing processes and equipment for both DRAM and 2D NAND flash
NAND flash was invented by Toshiba in 1989 and entered commercial mass production in the early 2000s. Since NAND flash has much faster access speed than mechanical hard drives, and...
Tuesday 10 May 2022
Memory prices to rebound in 2H22, say IC distributors
Memory prices will be trending downward in the second quarter of 2022, but are likely to rebound in the second half of the year when new smartphones hit market shelves, according...
Monday 9 May 2022
The memory industry (1): The era of DRAM driving semiconductor manufacturing process improvement
Semiconductor is a high-tech industry that requires continuous investment in the development of cutting-edge technologies to create new economic value. With the advantage of entering...
Monday 9 May 2022
Memory chips increasingly important in heterogeneous integration, says Winbond
The role of memory chips has become increasingly important in heterogeneous integration, and Winbond Electronics is working with potential customers in multiple related design projects,...
Friday 6 May 2022
DRAM spot prices continue slide
DRAM spot prices have been falling since April and will continue trending downward in May and June, which will be dragging down further the memory contract prices in the second quarter,...
Wednesday 4 May 2022
Innodisk sets edge AI computing as new business focus
Taiwan-based Innodisk, dedicated to supplying industrial embedded flash and DRAM storage solutions, has announced its new business focus on edge AI computing technologies and applications,...
Tuesday 3 May 2022
Specialty memory vendor ESMT remains upbeat about 2022 sales
Taiwan's specialty memory IC design house Elite Semiconductor Memory Technology (ESMT) is still striving to rake in record revenues for 2022 despite posting lackluster business results...
Friday 29 April 2022
Samsung claims advanced foundry yields stabilizing
Samsung Electronics' foundry business achieved its highest-ever first-quarter sales, thanks to solid demand from all applications and improvements in the yields of the advanced process,...
Thursday 28 April 2022
SK Hynix sees profits more than double in 1Q22
SK Hynix has reported operating profits jumped 116% from a year earlier to KRW2.86 trillion (US$2.26 billion) in the first quarter of 2022 when revenue climbed 43% on year to KRW12.16...
Friday 22 April 2022
Notebook component shortages worsening on China lockdowns
A variety of notebook components including connectors, wirings, PCBs, plastics, metal parts and molds, all long in sufficient supply, have slipped into shortages due to production...
Thursday 21 April 2022
Winbond to scale up DDR3 output
Winbond Electronics has disclosed plans to boost its DDR3 chip output, which will climb as a proportion of the company's total DRAM revenue to 50% by 2024 from the current 30%.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.