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NEWS TAGGED DRAM
Friday 18 June 2021
Nanya to see over 25% revenue gains in 2Q21 on rising DRAM ASPs
Nanya Technology is expected to post revenue growth of 25% or more sequentially in the second quarter of 2021, buoyed by sharp DRAM price rises, particularly for DDR3 solutions, according...
Wednesday 16 June 2021
IC Insights raises 2021 IC market forecast to 24% growth
IC Insights has raised its IC market growth forecast for 2021 to 24%, compared with its previous estimate of 19% growth.
Tuesday 15 June 2021
Innodisk poised to post record 2Q21 revenue
Specializing in industrial flash storage, memory module maker Innodisk is poised to see its second-quarter revenue hit a record high, according to market sources.
Tuesday 15 June 2021
Semiconductor revenue increases slightly in 1Q21
Semiconductor revenue in the first quarter of 2021 grew from the previous quarter, marking just the third time that has happened since research firm Omdia began tracking quarterly...
Tuesday 15 June 2021
PSMC negotiating orders for 2023
Taiwan-based pure-play foundry Powerchip Semiconductor Manufacturing (PSMC) continue to see orders demanding 8- and 12-inch wafer fabrication services pull in, and is in talks with...
Friday 11 June 2021
SK Hynix server DRAM defects send spot prices up
Spot market prices for server DRAM memory have shown a sudden rise amid speculation over a batch of SK Hynix-produced defective wafers, according to industry sources.
Friday 11 June 2021
Rising niche-market DRAM prices buoy Etron, ESMT
Memory IC design specialists Elite Semiconductor Memory Technology (ESMT) and Etron Technology have both reported brisk sales results for May 2021, buoyed by rising niche-market DRAM...
Wednesday 9 June 2021
DRAM contract prices to rise at slower rate in 3Q21
DRAM contract prices will rise by a slower 3-8% rate in the third quarter after registering a 18-23% rally in the second quarter, according to TrendForce.
Wednesday 9 June 2021
Micron unveils new products based on leading 176-layer NAND and 1-alpha DRAM process for the new data economy
The digital transformation driven by the convergence of AI and 5G has made data a key enabler of economic development. As a result, in addition to requiring higher computing performance,...
Monday 7 June 2021
Winbond to see profit more than double in 2Q21
Rising specialty DRAM and NOR flash memory prices are set to boost net profits at Winbond Electronics in the second quarter of 2021, which are likely to more than double those generated...
Monday 7 June 2021
Samsung to see non-memory chip sales boom in 2021
Samsung Electronics is expected to see sales of its non-memory business particularly the system LSI segment boom this year, buoyed by strong demand for handset application processors,...
Friday 4 June 2021
Rising memory prices buoy sales at Nanya, Adata
A rally in memory prices boosted revenue at chipmaker Nanya Technology and module company Adata Technology in May 2021.
Friday 4 June 2021
TSMC InFO_B packaging gains positive feedback
TSMC's just-unveiled InFO_B packaging technology designed for smartphones enables DRAM stacking flexibility at contract manufacturers, and has received positive feedback from handset...
Thursday 3 June 2021
Micron eyeing bigger share of memory profit pool
Micron Technology, a supplier of DRAM and NAND flash memory, is eyeing a bigger share of its industry's profits.
Wednesday 2 June 2021
Micron intros 176-layer NAND, 1α DRAM technology
Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company...
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.