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    Memory price hikes squeeze Samsung smartphone HDI supply
    4h 50min ago
    Samsung foundry S5 shift to DRAM faces major hurdles
    4h 50min ago
    Chinese smartphone price hikes hit Southeast Asia shipments
    4h 50min ago
    China semiconductor equipment makers expand localization into advanced packaging
    4h 50min ago
    Analysis: can Taiwan’s research institutes follow imec’s EUV model?
    4h 50min ago
    South Korea confirms US request for expanded semiconductor investment
    4h 50min ago
    NEWS TAGGED DRAM
    Monday 7 September 2026
    HBM4 squeezes DRAM supply as Samsung, SK Hynix inventories fall below 10 days
    Memory inventories at Samsung Electronics and SK Hynix have fallen below 10 days of supply as AI infrastructure spending drives simultaneous demand for HBM, server DRAM and enterprise...
    Monday 7 September 2026
    SK Hynix 1c DRAM production share to reach 34% by year-end ahead of HBM4E
    SK Hynix is accelerating its shift to sixth-generation 10nm-class 1c DRAM, with the process expected to account for roughly 34% of its DRAM production by the fourth quarter as the...
    Monday 7 September 2026
    Naura 3D DRAM etching breakthrough could give CXMT a new path beyond EUV
    China's Naura Technology has demonstrated a selective etching process for 64-layer 3D DRAM structures, potentially giving domestic memory makers another route to raise transistor density...
    Sunday 6 September 2026
    TEL sees AI-driven packaging, memory demand reshaping Taiwan strategy
    Tokyo Electron's Taiwan president said AI is pushing semiconductor demand into new areas, with advanced packaging, DRAM, high-bandwidth memory, and NAND flash all gaining momentum...
    Saturday 5 September 2026
    Micron looks to lock in Taiwanese construction capacity with long-term deals
    The global rush to build semiconductor fabs is creating a historic opportunity for Taiwan's construction and facility engineering supply chain, and Micron Technology is looking to...
    Saturday 5 September 2026
    Commentary: China builds three-pronged memory strategy around CXMT, YMTC, XMC
    China's memory industry is shifting from a single-champion model towards a three-pronged structure. ChangXin Memory Technologies (CXMT) is building its position in DRAM, Yangtze Memory...
    Friday 4 September 2026
    TSMC urges HBM makers to design for X-ray inspection as packaging grows more complex
    TSMC is calling for future HBM and DRAM designs to become more compatible with X-ray inspection, as increasingly complex advanced packaging makes buried defects harder to detect while...
    Friday 4 September 2026
    AI boom reshapes DRAM market as Samsung regains lead and CXMT gains ground

    The global DRAM market continued its explosive expansion in the second quarter of 2026, as AI infrastructure spending drove demand for...

    Friday 4 September 2026
    Kioxia pitches flash as a DRAM substitute as Micron, YMTC close in
    Kioxia's plan to push NAND flash into work that DRAM currently does is less a product launch than an answer to a structural problem. Alone among the leading memory makers, it does...
    Thursday 3 September 2026
    CXMT expands global hiring to Japan for DDR5, LPDDR technology upgrade

    Chinese DRAM maker CXMT has launched its 2027 global recruitment campaign, opening roles across circuit design, R&D, mass-production...

    Thursday 3 September 2026
    Intel pre-funds EMIB-T and CPU capacity, will address DRAM through partners rather than fabs
    Intel's US$23 billion equity raise in August was pre-funding for a capacity build driven by demand and process confidence rather than distress, chief financial officer David Zinsner...
    Thursday 3 September 2026
    CXMT's 'Hefei Project' exposed in Samsung DRAM theft case
    South Korean prosecutors allege that Chinese memory maker ChangXin Memory Technologies (CXMT) set up an internal "Hefei Project" in 2016 to obtain Samsung Electronics' core DRAM technology...
    Wednesday 2 September 2026
    Micron says tightly coupled DRAM could deliver more than 10x HBM bandwidth
    Micron Technology is exploring tightly coupled DRAM that could deliver more than 10 times the bandwidth of HBM while using substantially less energy per bit, as the memory maker looks...
    Wednesday 2 September 2026
    DRAM giants target 3D stacking to break memory wall and power bottlenecks
    At a shared stage at Semicon Taiwan 2026, executives from Samsung Electronics, SK Hynix, and Micron agreed that traditional 2.5D high-bandwidth memory (HBM) using interposers is approaching...
    Wednesday 2 September 2026
    Nvidia pushes into HBM base dies as NVHBM battle heats up
    The competition in high-bandwidth memory (HBM) is moving beyond DRAM stack height, bandwidth, and packaging to the base die at the very bottom of the package. As Nvidia pushes its...
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    GlobalExhibition
    BIZ FOCUS
    Sep 2, 08:22
    World Diamond Technology accelerates mass production of 300 mm diamond wafers
    Wednesday 2 September 2026
    Beyond Language: Indonesian Engineers Bridging Cultures in Taiwan's Semiconductor Industry
    Wednesday 2 September 2026
    8 September Hsinchu seminar: Silicon photonics driving AI chains
    Wednesday 2 September 2026
    DAS Introduces ALCEA for Integrated NOx Treatment in Semiconductor Fabs
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