Samsung Electronics is reportedly set to exclusively supply sixth-generation high-bandwidth memory (HBM4) to OpenAI while reallocating more than half of its advanced foundry capacity...
Samsung Electronics held its 57th annual shareholders meeting on March 18 in Suwon, South Korea, where it unveiled advanced memory products, including high-bandwidth memory (HBM),...
Driven by AI applications boosting advanced processes, HBM, and packaging technologies, demand for key materials like silicon wafers and photoresists has surged. Topco Scientific (TSC)...
A diplomatic dispute over administrative nomenclature has escalated into a high-stakes standoff between Taiwan and South Korea, threatening to cast a shadow over one of the world's...
SK Hynix is accelerating its next-generation memory strategy, with stable progress on HBM4 production, aggressive capacity expansion in South Korea, and a growing focus on AI-driven...
Addressing the current surge in demand for high-bandwidth memory (HBM) driven by AI-accelerated computing, SK Group chairman Chey Tae-Won stated at Nvidia GTC 2026 on March 16, 2026,...
The 2026 NVIDIA Global Technology Conference (GTC) has transcended its origins as a developer forum to become the ultimate proving ground for the high-bandwidth memory (HBM) indust...
Samsung Electronics' semiconductor division is concerned that the current memory supercycle, driven by supply shortages, could last only one to two years before the market turns downward...
At the Nvidia GTC 2026 conference, Micron Technology signaled a major push in the AI hardware race, announcing high-volume production of memory and storage components purpose-built...
Driven by growing demand for AI servers and high-performance computing (HPC) applications, Taiwan's exports to the US surged 83% in the first two months of 2026, marking a strong performance...
DRAM and NAND flash prices have soared by as much as 180% since the Lunar New Year, amid worsening memory chip supply shortages that are expected to persist at least until late 2027...
Samsung Electronics is reportedly planning to adopt a 2-nanometer (nm) process for the base die of its next-generation high-bandwidth memory (HBM), HBM4E, aiming to enhance its technological...
