China's Yangtze Memory Technologies (YMTC) has delivered samples of its in-house developed 192-layer 3D NAND flash memory to a few customers recently, according to industry sources.
Amid the ongoing trade tensions between the US and China, YMTC has taken a low-profile approach to making advances in its NAND flash manufacturing technology development. Nevertheless, the China-based memory chipmaker is expected to make its 192-layer 3D NAND flash debut by the end of this year, the sources said.
The capability of introducing 192-layer 3D NAND flash chips would mark a milestone for YMTC, which is striving to catch up with its bigger South Korea- and US-based peers in the technology race, the sources indicated.
YMTC has also scaled up its monthly output to 100,000 wafers, as manufacturing yield rates for the company's 128-layer 3D NAND flash process has improved to satisfactory levels, said the sources.
In addition, YMTC will soon complete constructing the second-phase facility of its plant in Wuhan, where it is headquartered, with equipment move-in slated to kick off later this year, the sources noted. The China-based memory chipmaker is expected to see its global market share reach 7-8% by the end of 2023, when its monthly output is likely to top 200,000 wafers, according to the sources.
In other news, Micron Technology has introduced what the company claims is the industry's first 232-layer 3D NAND flash memory, which will be featured in new SSDs slated for launch in 2023.
Samsung Electronics is expected to join the race for 200-plus-layer 3D NAND flash memory later in 2022, market observers believe.
Article translated by Jessie Shen
