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CXMT adopts SK Hynix's MR-MUF tech to close China's HBM gap by 2026

Lillian Chen, Taipei; Levi Li, DIGITIMES Asia Friday 7 November 2025 0

Credit: CXMT

China's DRAM maker CXMT plans to start mass production of fourth-generation high-bandwidth memory (HBM3) in 2026 using mass reflow molded underfill (MR-MUF) packaging, the same technology employed by South Korea's SK Hynix, now the global HBM leader.

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