At HPE Discover 2025, SK Hynix unveiled its 16-layer sixth-generation high bandwidth memory (HBM4) for the first time, aiming to maintain its technological leadership in the HBM4...
Micron is doubling down on HBM as a core growth driver, reporting strong momentum in its HBM3E ramp and laying out a clear roadmap for its next-generation HBM4 products.
SK Hynix has reportedly secured customized high-bandwidth memory (HBM) orders from Nvidia, Microsoft, and Broadcom, pulling ahead of domestic rival Samsung Electronics in the race...
Samsung Electronics wrapped up its global strategy meeting with the Device Solutions division, outlining plans to regain ground in high-bandwidth memory and foundry operations. The...
South Korea's top chipmakers, SK Hynix and Samsung Electronics, are heading into 2025 with dramatically diverging fortunes, as the global race for AI-driven memory dominance accelerates...
As Nvidia prepares to begin supplying samples of its next-generation AI accelerator "Rubin," industry sources report that SK Hynix is accelerating shipments of sixth-generation high-bandwidth...
AMD on June 12 officially confirmed that its next-generation AI accelerators—the Instinct MI350X and MI355X—will feature 12-high HBM3E memory supplied by Samsung and Micron...
As data centers face increasing demands for AI training and inference workloads, high-bandwidth memory (HBM) has become a critical competitive edge for memory manufacturers. Micron...
Nvidia has reportedly tapped Micron Technology as the first supplier of its next-generation small outline compression attached memory module (SOCAMM) chips, putting the US-based memory...
As mass production of sixth-generation HBM4 nears, South Korean chip giants Samsung Electronics and SK Hynix are aggressively reconstructing their semiconductor equipment supply chains...
Samsung Electronics has reportedly failed its third attempt at obtaining Nvidia's certification for 12-layer HBM3E chips in June 2025, according to a recent report by a Hong Kong...
According to a press release on June 10, Micron Technology announced it has begun shipping samples of its 36GB HBM4 with 12-high stacking to multiple customers. The new memory is...
European financial securities firm UBS recently released a report indicating that Samsung Electronics' anticipated 12-layer HBM3E, originally expected by June 2025, may not be ready...
Samsung Electronics is accelerating its push to reclaim semiconductor leadership, spotlighting its latest breakthrough in sixth-generation DRAM (1c node) yields. The development is...
In the high-stakes race to supply memory for the next generation of artificial intelligence, Samsung Electronics is under mounting pressure to deliver its 12-layer HBM3E chips to...
