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SiC power module advantages highlighted as luxury EVs move toward 800V, 800km

Julian Ho, Taipei; Eifeh Strom, DIGITIMES Asia 0

Credit: Lucid

Both third-generation semiconductor silicon carbide (SiC) power components and silicon-based insulated gate bipolar transistors (Si-based IGBT) are being used in electric vehicles (EV), but the market has yet to determine which of the two is better.

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