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Battery EVs the main arena for SiC, says Rohm

Julian Ho, Taipei; Eifeh Strom, DIGITIMES Asia Tuesday 21 December 2021 0

Roye Tang, manager of Rohm's Taiwan technical center. Credit: DIGITIMES

The wide bandgap (WBG) features of third-generation semiconductors make them particularly suitable for recharging and radio frequency (RF) applications, as silicon carbide (SiC) has better heat resistance. SiC power components and modules will concentrate...

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