Alkaidsemi (Shanghai) Technologies Corporation has introduced a 1,200 V silicon carbide superjunction MOSFET that it describes as the world's first SiC superjunction MOSFET product. Project leader Hao Yue said it is among the first globally to complete product validation, positioning the company for emerging demand from AI server power supplies and high-voltage direct-current data center architectures.
China's leading DRAM maker ChangXin Memory Technologies (CXMT) has begun trial production of HBM3, but its initial yield has reportedly remained around 25%, highlighting the difficulty of translating its progress in conventional DRAM into high-performance AI memory.
