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Taiwan academia advances E-band research for satellite communication applications

Bryan Chuang, Taipei; Rodney Chan, DIGITIMES Asia 0

Credit: DIGITIMES

E-band wireless communication, operating between 71-76 GHz and 81-86 GHz, offers extremely high data throughput and ultra-low latency. Beyond its current use in automotive radar, next-generation satellite communications are emerging as a key potential application for E-band technology.

Taiwan's academic institutions have been developing high-gain, wideband E-band antennas in recent years, such as the 77 GHz TM05 patch array antenna. Supported by the National Science and Technology Council (NSTC), future efforts will focus on power amplifiers and front-end modules that enhance device operating frequency, power density, linearity, and high-frequency packaging integration capabilities.

Compared to widely used satellite bands like Ku (12-18 GHz), K (18-27 GHz), and Ka (27-40 GHz), E-band wavelengths are much shorter, enabling significantly larger bandwidths and higher capacity. SpaceX has begun trialing E-band in its Starlink Gen2 satellite system to complement its existing Ka- and Ku-band networks. However, technologies for both E-band and V-band (50-75 GHz) remain in early development stages.

According to NSTC announcements, in 2026, professors Shuo-Hong Hsu from National Tsing Hua University (NTHU), as well as Tsorng-Juu Liang and Le-Ren Chang-Chien from National Cheng Kung University (NCKU), will lead an academic group under the High-Performance Compound Semiconductor Advanced Technology Research Project. A major focus is on designing and developing advanced high-frequency components and modules related to E-band.

Researchers highlight the rapidly growing demand for high-frequency, high-voltage, and high-power-density devices across satellite communications, electric vehicles (EVs), renewable energy, and smart grids. In addition to well-known wide bandgap materials like GaN and SiC, gallium oxide and diamond also show strong technical promise.

The academic teams plan to develop and validate 71-76 GHz E-band power amplifiers based on GaN-on-X active device technology, targeting linearity of 40-43 dBm and power density of 2 W/mm. Building on this foundation, they aim to overcome operational limits at higher frequencies, advancing into the 81-86 GHz range with highly integrated high-frequency packaging, achieving linearity of 43-46 dBm and power density of 2.5 W/mm.

Given that most Taiwanese industry and academia designs do not currently consider space environment conditions, circuit and module R&D for E-band must incorporate radiation-hardened packaging materials, circuit layouts, and system architectures suitable for space applications.

Article edited by Jack Wu