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Tuesday 4 January 2022
DDR5 key to stimulating overall DRAM bit supply growth in 2022
The overall DRAM bit supply growth is expected to decelerate in 2022, but demand for DDR5 memory could still be providing momentum, according to industry sources.
Thursday 30 December 2021
DRAM spot prices picking up
DRAM spot market prices have been picking up since December 2021, a bullish sign for the near-term price trend, according to industry sources.
Tuesday 7 September 2021
Stable demand for server apps may sustain DRAM price growth
Demand for server and datacenter applications has been stable and may help sustain DRAM price growth in the fourth quarter of this year, according to industry sources.
Tuesday 6 July 2021
Nanya sees 2Q21 revenue hit 11-quarter high
DRAM chipmaker Nanya Technology has reported revenue of NT$22.64 billion (US$808.9 million) for the second quarter of 2021, the highest in 11 quarters.
Friday 18 June 2021
Nanya to see over 25% revenue gains in 2Q21 on rising DRAM ASPs
Nanya Technology is expected to post revenue growth of 25% or more sequentially in the second quarter of 2021, buoyed by sharp DRAM price rises, particularly for DDR3 solutions, according...
Monday 12 April 2021
Nanya posts profit hike in 1Q21
Taiwan-based DRAM maker Nanya Technology has reported net profit hiked 192.7% sequentially to NT$2.71 billion (US$95 million) in the first quarter of 2021. EPS for the quarter came...
Friday 29 January 2021
Micron delivers 1α DRAM technology
Micron Technology has announced volume shipments of 1α (1-alpha) node DRAM products.
Thursday 24 December 2020
Longsys preps for IPO
Memory module firm Longsys Electronics has filed an application for its A-shares IPO and expects to trade on the Shenzhen Stock Exchange (SZSE).
Tuesday 22 December 2020
DRAM spot prices surge
Spot market prices for DRAM memory have surged recently and reached levels that are over 20% higher than contract market prices, according to sources at memory module houses.
Wednesday 16 September 2020
China chipmakers suspend shipments to Huawei
China-based chipmakers have quietly suspended their shipments to Huawei, as well as the joint development projects they had been working with the Chinese vendor, amid concerns about...
Tuesday 8 September 2020
DRAM spot prices rise 10-15% in September
Spot market prices for DRAM memory have rallied 10-15% so far in September 2020, according to sources at memory module houses. Huawei's aggressive chip purchases prior to new US sanctions...
Tuesday 1 September 2020
Samsung begins mass production of 16Gb LPDDR5 DRAM
Samsung Electronics has announced mass production of 16Gb LPDDR5 mobile DRAM, using extreme ultraviolet (EUV) technology, at its second production line in Pyeongtaek.
Thursday 12 March 2020
DRAM vendors enhance LPDDR5 offerings
Memory vendors have enhanced their LPDDR5 mobile DRAM offerings to include those for midrange 5G-capable smartphones.
Monday 9 March 2020
Transistor count trends continue to track with Moore's Law, says IC Insights
The primary yardstick by which the IC industry measures its technological performance and progress remains Moore's Law that states there is a doubling of the number of transistors...
Thursday 27 February 2020
Nanya, CXMT gearing up for 10nm-class chip production
Nanya Technology and Changxin Memory Technologies (CXMT) are both gearing up to enter volume production of their 10nm-class DRAM chips in the second half of 2020.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.