Winbond Electronics has disclosed plans to boost its DDR3 chip output, which will climb as a proportion of the company's total DRAM revenue to 50% by 2024 from the current 30%.
The additional DDR3 chip output will be mainly those available in densities of 4Gb and less, said Winbond, adding that it is eyeing an even bigger share in the DDR3 market segment.
Winbond is scheduled to start operating its new 12-inch fab in Kaohsiung, southern Taiwan in the fourth quarter of 2022, the chipmaker said. The fab will kick off volume production of chips built using a newer 25S nanometer process, and is poised to contribute to Winbond's DDR3 output ramp-up.
Winbond expects to ramp up monthly output at its new fab in Kaohsiung to 10,000 12-inch wafers when it comes online in the fourth quarter, which will boost its overall production capacity by 40%.
Winbond is also on track to increase its 25nm DRAM chip output in Taichung, central Taiwan to 15,000 wafers from 12,000, with the additional capacity mainly for 2Gb DDR3 products, the company said. Winbond's Taichung site is capable of processing about 24,000 wafers monthly.
Eyeing promising DDR3 demand for a wide range of niche-market device applications, Winbond said it will stay in the the business over the next decade.
Winbond has decided to boost its monthly production capacity for 25nm DRAM at its plant in Taichung, central Taiwan to 15,000 wafers from 12,000, with the increased capacity mainly for churning out 2Gb DDR3 products, the sources indicated.