China has further revised up its solar power development target for 2015 by 50 percent from its previous plan, state media reported on Thursday.

Optimizing lateral double-diffused MOS transistors with a breakdown voltage exceeding 700V, the initial entry (without epitaxial layer) in the new ultra high voltage BCDMOS portfolio specifies low on-resistance to implement robust LED driver ICs for a broad range of LED lighting applications.

Apple is reportedly going to use part of its enormous pile of cash to buy an Israeli fabless semiconductor company that specializes in flash storage solutions.

Installations of solar panels worldwide this year are likely to rise more than one-third over 2010, according to a study released Tuesday.

20nm seems to be the new cutting-edge process for memory production, but Intel and Micron might be surprised to find Hynix has just surpassed them. The Korean manufacturer has used the IEDM to announce it has managed to manufacture middle-1Xnm-generation NAND flash.