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Dec 1, 16:19
CXMT narrows DRAM gap; market impact may be smaller than expected?
China's memory manufacturer CXMT, backed by government support, shifted to high-end technology development from 2025 and has introduced multiple next-generation DRAM products within a year, with performance approaching Samsung Electronics and SK Hynix.
Tata Electronics is ramping up hiring and redesigning its Gujarat chip fab as it races to match Apple's fast-growing India production. The expansion comes amid soaring iPhone exports and mounting engineering challenges, underscoring the Tata Group's broader push to scale electronics and semiconductor manufacturing.
PaleBlueDot AI seeks US$300m loan for Nvidia chips
Dec 1, 16:27
US AI company PaleBlueDot AI is reportedly seeking a US$300 million loan to help Chinese social media platform RedNote (Xiaohongshu) use Nvidia's high-end AI chips through a data center located in Tokyo.
Micron Technology is reportedly planning to invest JPY1.5 trillion(US$9.6 billion) to establish a new high-bandwidth memory (HBM) manufacturing facility at its Hiroshima campus, according to Nikkei. The initiative aims to increase production of advanced chips designed for artificial intelligence (AI) systems and to lessen the company's dependence on Taiwan amid growing concerns over global supply chain vulnerabilities.
At the upcoming International Solid-State Circuits Conference (ISSCC) 2026 in February, Samsung Electronics and SK Hynix are set to unveil significant advances in high-performance memory. Samsung plans to showcase a redesigned 6th-generation high-bandwidth memory (HBM4) delivering 3.3TB/s of bandwidth, while SK Hynix will introduce its latest high-speed LPDDR6 and GDDR7 products.
Shinkong Synthetic Fibers Corporation (SSFC) told investors on November 28 that it is navigating a challenging operating environment marked by raw material price volatility, Chinese product dumping, and shifting US tariff policies. The company said it is countering these pressures through diversified product development, rising contributions from its optoelectronics segment, and accelerating growth at subsidiary Shinsol Advanced Chemicals.

Nvidia CEO Jensen Huang made his fifth visit to Taiwan in 2025 on November 27, reportedly to pay a personal visit to TSMC founder Morris Chang. Speaking publicly, Huang confirmed he had met with Chang, describing the semiconductor pioneer's health as "very good," and added that he would be leaving Taiwan later that day.

Global memory supply has tightened so abruptly that December contract prices for major DRAM and NAND products have surged as much as 80 to 100 percent, according to Team Group General Manager Gerry Chen. He said the market is only entering the early phase of a multiyear shortage and that the real crunch will emerge in the first half of 2026 once distributors finish clearing inventory.
To support the semiconductor industry's net-zero emission goals, Taiwan Fertilizer (TFC) launched Taiwan's first certified blue ammonia in 2025, beginning sales in the second half of 2025. Initial volumes were limited due to customer certification processes, but TFC expects a significant increase in shipments in 2026 as demand from the semiconductor sector gradually grows.
Media reports show that Google's Ironwood TPU is equipped with HBM3E from Samsung Electronics and SK Hynix. According to the Korea Economic Daily, Samsung supplied over 60% of the total HBM delivered to Google via Broadcom in 2025. This was possible by a redesign of the DRAM used in HBM, which boosted HBM3E performance.
Optoelectronic semiconductor integration solution provider Brightek recently officially commissioned its Jiangsu factory, built with an investment of nearly CNY200 million (approx. US$28.3 million). Brightek stated that the new facility will fully support emerging applications such as international automotive manufacturers, smart mobility, intelligent sensing, and AI robotics, laying a critical foundation for growth over the next decade.

Micron said in its latest quarterly results that it will work with TSMC to produce base logic dies for both standard and custom HBM4E memory. The disclosure highlights a significant shift in how next-generation high-bandwidth memory may be built, as foundries, rather than DRAM makers, begin handling the foundational logic layer of advanced HBM stacks.

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