中文網
Taipei
Sun, Aug 14, 2022
04:52
mostly clear
27°C
CONNECT WITH US
NEWS TAGGED NAND FLASH
Friday 12 August 2022
Kioxia sees datacenter clients adjust NAND inventory
Datacenter and corporate clients have recently moved to adjust their NAND flash inventory in response to component shortages and global economic downturns, although demand for SSD...
Thursday 11 August 2022
Memory contract prices to continue slide in 3Q22
DRAM contract prices have fallen 15-25% since the second quarter showing no signs of stopping, while NAND flash contract prices are poised to drop over 10% in the third quarter, according...
Friday 5 August 2022
DRAM bit growth to reach 14% in 2023, says TrendForce
Global DRAM bit production is forecast to rise 14.1% in 2023, but growth on the demand side will grow only 8.3%, according to TrendForce. It may be the first time DRAM demand bit...
Friday 5 August 2022
Micron and WD proposes to form memory coalition amid fierce competition with China and Korea
Micron, the world's third largest memory chip manufacturer, announced on August 4 to jointly propose a Memory Coalition of Excellence (MCOE) with Western Digital (WD), another US...
Thursday 4 August 2022
NAND oversupply likey to remain throughout 2022
NAND oversupply is not expected to ease by the end of 2022, and over half of NAND suppliers are likely to suffer operating losses in the third quarter as chip prices are bound to...
Thursday 4 August 2022
SK Hynix develops 238-layer 4D NAND flash
SK Hynix has announced the development of its 238-layer 4D NAND flash memory, with shipments of 512Gb triple-level cell (TLC) chip samples already kicking off.
Tuesday 2 August 2022
Japan subsidies for Kioxia-WD NAND flash plant: A step towards 'Chip 4 Alliance'?
Following the subsidies to TSMC's 300mm fab in Kumamoto and TSMC's 3DIC R&D center in Ibaraki, Japan's Ministry of Economy, Trade and Industry (METI) has lately announced plans...
Tuesday 2 August 2022
Memory spot price falls widen
Memory spot prices continue to fall with the price drops widening, according to sources at memory module makers.
Monday 1 August 2022
Samsung semiconductor division posts record revenue for 2nd consecutive quarter
Samsung Electronics has reported consolidated revenue climbed to a record high of KRW77.2 trillion (US$59.4 billion) in the second quarter of 2022, when its device solutions (DS)...
Wednesday 27 July 2022
Micron kicks off volume production of 232-layer NAND
Micron Technology has kicked off volume production of what the company claims is the world's first 232-layer NAND flash memory.
Wednesday 20 July 2022
TrendForce expects larger NAND flash price falls in 3Q22
NAND flash prices are forecast to drop by 8-13% in the third quarter of 2022, according to TrendForce, which estimated previously an up to 8% decrease.
Tuesday 19 July 2022
YMTC to commercialize new 3D NAND capacity in late 2022
Braving the headwinds facing the NAND flash market, China's Yangtze Memory Technologies (YMTC) is set to commercialize new capacity at its second NAND plant in the country by the...
Tuesday 12 July 2022
Flash device controller production capacity loosening
The supply of SSD and other NAND flash device controller chips, which are manufactured using 55nm, 40nm and 28nm process technologies at 12-inch fabs, has become less tight as foundries...
Monday 11 July 2022
Samsung, SK Hynix and Micron dominate 1Q22 smartphone memory market
The global smartphone memory market clocked a total revenue of US$11.5 billion in the first quarter of 2022, according to Strategy Analytics. Samsung Electronics, SK Hynix and Micron...
Monday 11 June 2018
Winbond W25N01JW
Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.