News tagged DRAM at DIGITIMES

NEWS TAGGED DRAM

Wednesday 30 September 2026

Commentary: What risks does China's DRAM capacity face amid tightening market?

China's continued expansion of DRAM capacity has raised a key question for the global memory market: will supply and demand flip?

Wednesday 30 September 2026

CXMT's US$5.2 billion buildout deepens China's push for domestic DRAM equipment

China's largest dynamic random-access memory (DRAM) maker ChangXin Memory Technologies (CXMT) is accelerating a CNY34.9 billion (US$5.2 billion) expansion aimed at chipmaking equipment,...

Wednesday 30 September 2026

CXMT expansion meets surging GigaDevice DRAM demand, sharpening China's memory supply-chain buildout

CXMT's continued DRAM capacity expansion is coinciding with stronger demand from China's domestic memory sector.

Wednesday 30 September 2026

Inside China's 3D DRAM push: from lab to fab, and the road ahead

China's push into 3D DRAM is moving from early-stage research into wafer processes and equipment, with efforts spanning the Institute of Microelectronics of the Chinese Academy of...

Tuesday 29 September 2026

CXMT to spend US$5.2 billion on R&D and testing as DRAM supply stays tight

China's ChangXin Memory Technologies (CXMT) plans to invest CNY34.9 billion (approx. US$5.2 billion) in technology R&D and additional back-end DRAM testing capacity, stepping up...

Tuesday 29 September 2026

Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5

Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific...

Tuesday 29 September 2026

SK Hynix tests HBM5 with TSMC as HBM4 enters Nvidia's next platform

SK Hynix has validated its HBM5 memory with TSMC's CoWoS packaging, the company said in a September 28 post on its corporate newsroom...

Tuesday 29 September 2026

HBM to take nearly 30% of DRAM capacity as Samsung speeds up P5

High-bandwidth memory (HBM) is expected to account for nearly 30% of DRAM makers' total wafer capacity in 2027, up from about 20% currently, as Samsung Electronics moves to accelerate...

Monday 28 September 2026

Weekly news roundup: China gains ground in memory and AI hardware as supply stays tight

China's AI sector is shifting from catch-up to commercialization, with value concentrating in hardware bottlenecks and large platforms rather than independent model labs. Across memory,...

Saturday 26 September 2026

Acer, Phison split on DRAM outlook as PC memory supply eases

Acer and Phison Electronics are offering sharply different readings of the DRAM market as supply conditions improve for mainstream PC memory while AI and server demand keep the broader...

Thursday 24 September 2026

CXMT gains ground in DRAM as Samsung, SK Hynix shift more capacity to HBM

China's ChangXin Memory Technologies (CXMT) is gaining ground in the global DRAM market as Samsung Electronics and SK Hynix allocate more production capacity to high-bandwidth memory...

Thursday 24 September 2026

Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding

Samsung Electronics has reportedly revised the roadmap for its first sub-10nm DRAM generation, making a wafer-to-wafer hybrid-bonding architecture the baseline for its D0a process...

Tuesday 22 September 2026

Samsung weighs 4nm expansion as HBM4 demand strains capacity

Samsung Electronics is considering expanding its 4nm foundry capacity as rising HBM4 base-die demand pushes existing capacity to full...

Tuesday 22 September 2026

China's memory race turns inward — CXMT, YMTC head toward patent showdown

Global memory shortages remain severe, with AI and cloud applications intensifying demand for scarce supply. Prices for both DRAM and...

Monday 21 September 2026

SK Hynix pushes deeper into logic for next-generation 3D DRAM

SK Hynix is pushing deeper into logic design as it develops a next-generation 3D DRAM architecture that could separate memory-cell processing...

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