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NEWS TAGGED DRAM
Tuesday 29 September 2026
CXMT to spend US$5.2 billion on R&D and testing as DRAM supply stays tight
China's ChangXin Memory Technologies (CXMT) plans to invest CNY34.9 billion (approx. US$5.2 billion) in technology R&D and additional back-end DRAM testing capacity, stepping up...
Tuesday 29 September 2026
Samsung reshuffles DRAM roadmap, prioritizing B1b hybrid bonding for D0a, HBM5
Samsung Electronics is reshaping its next-generation dynamic random-access memory (DRAM) roadmap, elevating its B1b wafer-to-wafer (W2W) hybrid bonding technology from a project-specific...
Tuesday 29 September 2026
SK Hynix tests HBM5 with TSMC as HBM4 enters Nvidia's next platform

SK Hynix has validated its HBM5 memory with TSMC's CoWoS packaging, the company said in a September 28 post on its corporate newsroom...

Tuesday 29 September 2026
HBM to take nearly 30% of DRAM capacity as Samsung speeds up P5
High-bandwidth memory (HBM) is expected to account for nearly 30% of DRAM makers' total wafer capacity in 2027, up from about 20% currently, as Samsung Electronics moves to accelerate...
Monday 28 September 2026
Weekly news roundup: China gains ground in memory and AI hardware as supply stays tight
China's AI sector is shifting from catch-up to commercialization, with value concentrating in hardware bottlenecks and large platforms rather than independent model labs. Across memory,...
Saturday 26 September 2026
Acer, Phison split on DRAM outlook as PC memory supply eases
Acer and Phison Electronics are offering sharply different readings of the DRAM market as supply conditions improve for mainstream PC memory while AI and server demand keep the broader...
Thursday 24 September 2026
CXMT gains ground in DRAM as Samsung, SK Hynix shift more capacity to HBM
China's ChangXin Memory Technologies (CXMT) is gaining ground in the global DRAM market as Samsung Electronics and SK Hynix allocate more production capacity to high-bandwidth memory...
Thursday 24 September 2026
Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding
Samsung Electronics has reportedly revised the roadmap for its first sub-10nm DRAM generation, making a wafer-to-wafer hybrid-bonding architecture the baseline for its D0a process...
Tuesday 22 September 2026
Samsung weighs 4nm expansion as HBM4 demand strains capacity

Samsung Electronics is considering expanding its 4nm foundry capacity as rising HBM4 base-die demand pushes existing capacity to full...

Tuesday 22 September 2026
China's memory race turns inward — CXMT, YMTC head toward patent showdown

Global memory shortages remain severe, with AI and cloud applications intensifying demand for scarce supply. Prices for both DRAM and...

Monday 21 September 2026
SK Hynix pushes deeper into logic for next-generation 3D DRAM

SK Hynix is pushing deeper into logic design as it develops a next-generation 3D DRAM architecture that could separate memory-cell processing...

Monday 21 September 2026
Samsung reportedly plans to double HBM4 output in 2027 as memory supply stays tight

Samsung Electronics is reportedly preparing to at least double production of its HBM4-family memory in 2027, accelerating a shift toward...

Monday 21 September 2026
CXMT closes in on DRAM leaders with G5 process breakthrough

China's CXMT has begun mass production of its fifth-generation DRAM platform, or G5, claiming process capabilities comparable with the...

Friday 18 September 2026
CXMT eyes NAND amid global shortage, taking aim at YMTC

ChangXin Memory Technologies (CXMT) is preparing to expand beyond DRAM into NAND flash, a move that would push China's leading DRAM...

Friday 18 September 2026
China's memory push gains ground across LPDDR6, advanced NAND, with HBM still the test

AI is reshaping the global memory industry, tightening supply while creating an opening for China's domestic suppliers. With Samsung...