With a strike by Micron Taiwan employees looming, Micron Technology said Micron Memory Taiwan and the Taichung chapter of the Taiwan Micron Memory Union had reached agreement on several...
Chinese DRAM maker CXMT is targeting higher-density manufacturing. At a recent shareholder meeting, management pledged to enter what it called the "uncharted territory" of extreme...
AI processor performance continues to improve, but memory bandwidth is growing more slowly, making data supply a major constraint on AI chip performance and energy efficiency. Efforts...
Samsung Electronics is expected to enter 2027 with approximately 80% of its planned memory production secured under long-term contracts, reinforcing its pricing position while China's...
The AI wave is triggering a surge in memory demand that extends from cloud data centers to edge applications. This surge has not only delivered a substantial dividend to relevant supply...
Tesla CEO Elon Musk has predicted a surge in Chinese memory chip production by 2028, raising questions over Samsung Electronics and SK Hynix's pricing power during an AI-driven dynamic...
SK Hynix is strengthening its metrology and inspection (MI) capabilities as the transition toward 3D DRAM architectures and increasingly complex NAND stacking creates new challenges...
China's leading DRAM manufacturer, ChangXin Memory Technologies (CXMT), expects to report net profit of CNY131 billion to CNY132.5 billion (≈ US$19.58 billion to US$19.8 billion)...
Micron is developing a memory architecture for humanoid robots, joining Samsung Electronics and SK Hynix in efforts to serve AI systems that must process sensor data while operating...
AI data center investment continues to expand, keeping the global memory market undersupplied in the fourth quarter of 2026. Rising DRAM and NAND Flash contract prices are boosting...
China's semiconductor and computing hardware companies reported or forecast strong earnings growth in the first nine months of 2026, fueled by AI infrastructure investment, demand...
China's leading DRAM manufacturer CXMT has disclosed progress in its 4F² DRAM architecture and plans to introduce DDR5 registered dual in-line memory modules (RDIMMs) by the end...
China's Yangtze Memory Technologies (YMTC) is developing a next-generation 4F² DRAM design targeting data transfer speeds of 9,600 megatransfers per second (MT/s), expanding beyond...
Samsung Electronics has reportedly completed development of next-generation 4F² DRAM technology and is aligning commercialization with customer requirements, even as China's ChangXin...
SK Hynix aims to finalize the technical specifications for high-bandwidth flash (HBF) in January 2027 as it develops new memory technologies to address growing bottlenecks in AI inference...
