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Friday 20 June 2025
Micron challenges South Korean rivals with SOCAMM breakthrough and PTI support
As competition intensifies in the high-end memory market, Micron has taken the lead over South Korean competitors by becoming the first memory supplier for Nvidia's next-generation...
Friday 20 June 2025
HBM divide deepens: SK Hynix diversifies, Samsung pulls in-house
SK Hynix is doubling down on diversifying its supply chain for thermal compression bonding (TCB) equipment, crucial for producing high-bandwidth memory (HBM), while Samsung Electronics...
Wednesday 18 June 2025
CXMT targets 2027 HBM3E launch as China races to close HBM gap
China continues to lag behind memory giants SK Hynix, Micron, and Samsung Electronics in developing high bandwidth memory (HBM) technology. Although US export controls on semiconductor...
Monday 16 June 2025
US fab ambitions run into red tape and local resistance
The CHIPS and Science Act has unlocked tens of billions in federal subsidies to reshore semiconductor manufacturing in the US. Yet, major projects by leading chipmakers are being...
Saturday 14 June 2025
Samsung to benefit from soaring DDR4, LPDDR4 prices in 2Q25
The recent increase in mature process DRAM prices is expected to boost Samsung Electronics' DRAM business revenue, offsetting the sluggishness in its high bandwidth memory (HBM) business...
Friday 13 June 2025
Micron ships HBM4 to key customers, targets solid market share in 2025
As data centers face increasing demands for AI training and inference workloads, high-bandwidth memory (HBM) has become a critical competitive edge for memory manufacturers. Micron...
Friday 13 June 2025
SK Hynix unveils 30-Year DRAM roadmap with Vertical Gate, 3D stack in bid to extend Moore's Law
SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global...
Friday 13 June 2025
Micron reportedly clinches SOCAMM lead with Nvidia's greenlight
Nvidia has reportedly tapped Micron Technology as the first supplier of its next-generation small outline compression attached memory module (SOCAMM) chips, putting the US-based memory...
Thursday 12 June 2025
Memory price rally drives May gains for Adata and Team Group; 3Q outlook remains upbeat
Taiwan-based memory module vendors Adata Technology and Team Group Inc. saw notable revenue gains in May 2025, driven by continued price increases for DRAM and NAND flash. Adata reported...
Wednesday 11 June 2025
DDR4 crunch sends prices soaring 50%
Memory manufacturers are reducing production capacity for older processes, driving DDR4 prices to skyrocket. Although Samsung Electronics' last buy order (LBO) for DDR4 was originally...
Wednesday 11 June 2025
CXMT accelerates DDR5 memory production, phases out DDR4
In a sign of China's accelerating ambitions in the semiconductor race, ChangXin Memory Technologies (CXMT), the country's leading DRAM manufacturer, is rapidly advancing development...
Wednesday 11 June 2025
Micron ships HBM4 samples to key customers, targets 2026 ramp up
According to a press release on June 10, Micron Technology announced it has begun shipping samples of its 36GB HBM4 with 12-high stacking to multiple customers. The new memory is...
Tuesday 10 June 2025
SK Hynix presents future DRAM technology roadmap at IEEE VLSI 2025
SK Hynix Inc. (or "the company", www.skHynix.com) announced today that it presented a new DRAM technology roadmap for the next 30 years and the direction for a sustainable innovation...
Tuesday 10 June 2025
Chinese tech giants pivot to local memory suppliers as trade tensions persist
China's largest cloud and internet companies are implementing backup supply chain strategies as bilateral trade uncertainties continue. Baidu Inc., Alibaba, Tencent and Huawei have...
Monday 9 June 2025
Samsung reportedly races to LPDDR6 with 1c DRAM by late 2025 to fend off Chinese rival
Samsung Electronics is accelerating its development of next-generation low-power memory technology, aiming to begin production of LPDDR6 using its advanced 1c DRAM process in the...