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    NEWS TAGGED INNOSCIENCE
    Thursday 9 July 2026
    Infineon blocks Innoscience GaN products from US market after patent win

    Infineon has secured a final US import ban against Innoscience after the US International Trade Commission's May 7 ruling was upheld...

    Tuesday 7 July 2026
    US ruling confirms Innoscience infringed Infineon's GaN patents, imposes import ban

    The US International Trade Commission's final determination against Innoscience has been upheld following the conclusion of the Presidential...

    Friday 3 July 2026
    Analysis: Innoscience-Infineon clash shows China's courts becoming a weapon in the global GaN race
    A rare gallium nitride (GaN) patent clash dominated the opening day of electronica Shanghai 2026, after China's Innoscience accused Infineon of displaying GaN power products covered...
    Friday 3 July 2026
    Innoscience says Infineon removed disputed GaN products from Shanghai trade show after patent challenge
    Chinese gallium nitride (GaN) chipmaker Innoscience said on July 2 via its official WeChat account that certain GaN products from Infineon Technologies displayed at electronica China...
    Monday 29 June 2026
    Infineon counters Innoscience claim after China GaN patent setback
    Infineon and Innoscience are locked in a global legal battle over alleged infringement involving gallium nitride (GaN) technology, with courts across multiple jurisdictions becoming...
    Wednesday 17 June 2026
    InnoScience wins GaN patent battle against Infineon in China
    InnoScience Technology, a leading China-based integrated device manufacturer (IDM) in gallium nitride (GaN), has won a sweeping victory in the latest patent ruling against global power...
    Tuesday 12 May 2026
    Infineon wins US patent ruling against Chinese GaN rival Innoscience
    A patent dispute between Infineon Technologies and China's Innoscience over gallium nitride (GaN) technology has escalated after the US International Trade Commission upheld a preliminary...
    Tuesday 12 May 2026
    GaN patent fight between China and Europe extends beyond courtroom

    As the global patent battle over gallium nitride (GaN) semiconductors intensifies, a recent ruling by the US International Trade Commission...

    Thursday 5 February 2026
    Google AI platform win elevates Innoscience's 8-inch GaN manufacturing clout
    Driven by expanding AI servers, data centers, and new energy applications, third-generation semiconductor gallium nitride (GaN) is moving from niche technology toward mainstream power...
    Friday 5 December 2025
    Infineon's GaN patent wall forces global firms to rethink China ties
    In the global power-device supply chain, influence is shifting quickly as AI computing demand and geopolitical tension intensify. Although AI data centers urgently need gallium nitride...
    Friday 5 December 2025
    Commentary: Infineon-Innoscience GaN ruling delivers 'disputed victory' for both sides
    The US International Trade Commission (ITC) has issued its initial determination in Infineon's Section 337 case against China-based GaN supplier Innoscience. In a telling move that...
    Friday 5 December 2025
    AI power boom exposes Western GaN dilemma as firms still route through China
    TSMC's decision to exit the gallium nitride (GaN) foundry market has set off a major restructuring of the global power device supply chain toward China-independent models and sharpened...
    Thursday 4 December 2025
    Commentary: Why Onsemi, STMicro, and Nvidia are all converging on Innoscience's GaN factory floor
    Onsemi and Innoscience have signed a memorandum of understanding to expand mass production of GaN power devices using Innoscience's mature 8-inch GaN-on-silicon technology. Onsemi...
    Wednesday 3 December 2025
    Innoscience wins US GaN patent case as ITC rules no infringement
    Innoscience said at midday on December 3 via the Hong Kong Stock Exchange that it had prevailed in its US patent dispute with Infineon, marking a decisive turn in a long-running GaN...
    Wednesday 3 December 2025
    Onsemi and Innoscience sign MoU to explore expanded GaN power device production
    Onsemi and Innoscience have signed a memorandum of understanding to assess opportunities for expanding the manufacturing of gallium nitride (GaN) power devices, with a focus on accelerating...
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