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NEWS TAGGED HIGH-NA EUV
Friday 11 September 2026
Samsung, SK Hynix eye 2028 High-NA DRAM rollout

SK Hynix is targeting 2028 to apply High-NA extreme ultraviolet lithography to DRAM mass production and is considering joining an industry...

Friday 21 August 2026
Samsung holds off on High-NA EUV until 1nm production
Samsung Electronics does not expect to move High-NA EUV lithography into volume production until its 1nm-class generation, a timeline that points to around 2030, after it had earlier...
Friday 14 August 2026
Korea's CNT pellicle race heats up as aweXome Ray pushes toward EUV commercialization
As South Korea's major memory manufacturers race to secure next-generation lithography technologies for increasingly advanced process nodes, the approaching High-NA EUV era is adding...
Thursday 13 August 2026
Samsung delays High-NA EUV adoption until 1nm production in 2030
Samsung Electronics plans to introduce high-numerical-aperture extreme ultraviolet (High-NA EUV) lithography into mass production at its 1nm node around 2030, according to South Korean...
Thursday 13 August 2026
SK Hynix expands EUV roadmap with High-NA tools and PSM adoption
SK hynix said it is advancing its use of extreme ultraviolet (EUV) lithography for the mass production of next-generation DRAM, with high-numerical-aperture (High-NA) EUV equipment...
Thursday 23 July 2026
Intel 18A adopts High-NA EUV in dual-certification push
Intel Foundry has moved high numerical aperture (High-NA) EUV lithography into production on its Intel 18A process, with ASML confirming in a recent press release that Intel is using...
Wednesday 22 July 2026
Albany NanoTech Complex acquires ASML High NA EUV tools for chip research
Parts of ASML's next-generation high numerical aperture (High NA) extreme ultraviolet (EUV) machine have arrived in New York state, where they will be used for chipmaking R&D....
Tuesday 21 July 2026
Samsung keeps High-NA EUV rollout cautious as foundry profitability remains the focus

Samsung Electronics is taking a slower approach than Intel to High-NA extreme ultraviolet (EUV) lithography for advanced chip production,...

Sunday 19 July 2026
ASML supplier Trumpf says South Korea EUV demand is growing faster than Taiwan's
High-NA EUV lithography is becoming the semiconductor equipment industry's next major battleground as demand rises for more advanced chips used in artificial intelligence, high-performance...
Thursday 4 June 2026
TSMC sees no sign of capex slowdown as demand stays strong
TSMC chairman C.C. Wei told shareholders on June 4 that the company sees no reason to cut capital spending, citing strong demand for advanced chips, continuing expansion in the US,...
Friday 22 May 2026
Intel's foundry reset: 14A, 10A and tougher engineering rules
Intel CEO Lip-Bu Tan is reshaping the chipmaker's engineering culture and foundry strategy, confirming that 14A remains on track while revealing that early development has begun on...
Monday 27 April 2026
TSMC's refusal of ASML's expensive High-NA EUV equipment, explained
ASML has launched its 0.55 High Numerical Aperture Extreme Ultraviolet (High-NA EUV) in an effort to extend Moore's Law. The market had originally expected TSMC to adopt it first,...
Thursday 12 March 2026
IBM, Lam Research join forces on sub-1nm logic and High-NA EUV development

IBM and Lam Research have announced a five-year collaboration to develop materials, manufacturing processes, and High-NA EUV lithography...

Wednesday 10 September 2025
SEMICON Taiwan 2025: Zeiss hits milestone of 10 High NA optic systems shipped as TSMC probes future of Hyper NA EUV
At SEMICON Taiwan 2025, Zeiss Semiconductor Manufacturing Technology offered a rare glimpse into the future of extreme ultraviolet (EUV) lithography, outlining its optics roadmap from...
Wednesday 20 August 2025
China unveils e-beam lithography machine with precision near ASML's High-NA EUV, but faces mass production hurdles
China has unveiled its first domestically developed commercial electron-beam lithography (EBL) tool, marking a symbolic step forward in efforts to reduce reliance on foreign semiconductor...