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NEWS TAGGED DDR4
Wednesday 25 May 2022
Global top-3 DRAM makers hold 94% of 2021 market
Samsung Electronics, SK Hynix and Micron Technology held a combined 94% share of the global DRAM market in 2021, with Samsung and SK Hynix collectively taking up 71.3% of the market,...
Friday 6 May 2022
DRAM spot prices continue slide
DRAM spot prices have been falling since April and will continue trending downward in May and June, which will be dragging down further the memory contract prices in the second quarter,...
Wednesday 4 May 2022
Innodisk sets edge AI computing as new business focus
Taiwan-based Innodisk, dedicated to supplying industrial embedded flash and DRAM storage solutions, has announced its new business focus on edge AI computing technologies and applications,...
Wednesday 20 April 2022
GigaDevice posts profit hike in 1Q22
China's GigaDevice, which specializes in NOR flash memory, has reported net profits surged 126.1% on year to CNY681 million (US$106.5 million) in the first quarter of 2022.
Wednesday 30 March 2022
Samsung to stop taking DDR3 orders after 2022
Samsung Electronics has notified customers that the company will take DDR3 chip orders until the end of 2022 and fulfill the orders for deliveries until the end of 2023, according...
Tuesday 29 March 2022
DRAM, NAND flash spot prices start falling in March
Spot market prices for DRAM and NAND flash memory have fallen at a rapid pace since the middle of March, according to industry sources.
Tuesday 22 March 2022
CXMT to deliver 17nm DRAM samples in 2Q22
China-based memory foundry ChangXin Memory Technologies (CXMT) is poised to start delivering samples of DRAM chips built using its in-house developed 17nm process technology, according...
Wednesday 2 March 2022
DRAM contract prices to stop falling in 2Q22
DRAM contract prices are expected to stop falling and begin to rise in the second quarter of 2022, and NAND flash prices will be rising too, according to sources at memory module...
Tuesday 25 January 2022
Memory spot prices stop falling and rebound
Spot market prices for DRAM and NAND flash memory have stopped falling since January 2022, and are rebounding, according to industry sources.
Wednesday 5 January 2022
Highlights of the day: DDR4 spot prices rising
Demand may be still sluggish, but DDR4 spot market prices are already rising, thanks to supply side issues in the...
Wednesday 5 January 2022
DDR4 spot prices rebounding
DDR4 spot market prices continue to rebound despite the still-sluggish end-market demand, according to industry sources.
Tuesday 4 January 2022
DDR5 key to stimulating overall DRAM bit supply growth in 2022
The overall DRAM bit supply growth is expected to decelerate in 2022, but demand for DDR5 memory could still be providing momentum, according to industry sources.
Thursday 30 December 2021
Nanya to break ground for new DRAM plant in 1H22
Nanya Technology plans to break ground for a new DRAM plant in the first half of 2022 in an effort to meet growing market demand, and expects to invest a total of NT$300 billion (US$10.86...
Thursday 30 December 2021
DRAM spot prices picking up
DRAM spot market prices have been picking up since December 2021, a bullish sign for the near-term price trend, according to industry sources.
Friday 10 December 2021
Chipmakers gearing up for DDR5 output ramp-up
Samsung Electronics and other major DRAM chip vendors are looking to scale up substantially their output for DDR5 memory next year, according to sources at memory module makers.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.