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Grand Opening of Wolfspeed Mohawk Valley 200mm SiC Fab
NEWS TAGGED DDR4
Wednesday 25 May 2022
Global top-3 DRAM makers hold 94% of 2021 market
Samsung Electronics, SK Hynix and Micron Technology held a combined 94% share of the global DRAM market in 2021, with Samsung and SK Hynix collectively taking up 71.3% of the market,...
Friday 6 May 2022
DRAM spot prices continue slide
DRAM spot prices have been falling since April and will continue trending downward in May and June, which will be dragging down further the memory contract prices in the second quarter,...
Wednesday 4 May 2022
Innodisk sets edge AI computing as new business focus
Taiwan-based Innodisk, dedicated to supplying industrial embedded flash and DRAM storage solutions, has announced its new business focus on edge AI computing technologies and applications,...
Wednesday 20 April 2022
GigaDevice posts profit hike in 1Q22
China's GigaDevice, which specializes in NOR flash memory, has reported net profits surged 126.1% on year to CNY681 million (US$106.5 million) in the first quarter of 2022.
Wednesday 30 March 2022
Samsung to stop taking DDR3 orders after 2022
Samsung Electronics has notified customers that the company will take DDR3 chip orders until the end of 2022 and fulfill the orders for deliveries until the end of 2023, according...
Tuesday 29 March 2022
DRAM, NAND flash spot prices start falling in March
Spot market prices for DRAM and NAND flash memory have fallen at a rapid pace since the middle of March, according to industry sources.
Tuesday 22 March 2022
CXMT to deliver 17nm DRAM samples in 2Q22
China-based memory foundry ChangXin Memory Technologies (CXMT) is poised to start delivering samples of DRAM chips built using its in-house developed 17nm process technology, according...
Wednesday 2 March 2022
DRAM contract prices to stop falling in 2Q22
DRAM contract prices are expected to stop falling and begin to rise in the second quarter of 2022, and NAND flash prices will be rising too, according to sources at memory module...
Tuesday 25 January 2022
Memory spot prices stop falling and rebound
Spot market prices for DRAM and NAND flash memory have stopped falling since January 2022, and are rebounding, according to industry sources.
Wednesday 5 January 2022
Highlights of the day: DDR4 spot prices rising
Demand may be still sluggish, but DDR4 spot market prices are already rising, thanks to supply side issues in the...
Wednesday 5 January 2022
DDR4 spot prices rebounding
DDR4 spot market prices continue to rebound despite the still-sluggish end-market demand, according to industry sources.
Tuesday 4 January 2022
DDR5 key to stimulating overall DRAM bit supply growth in 2022
The overall DRAM bit supply growth is expected to decelerate in 2022, but demand for DDR5 memory could still be providing momentum, according to industry sources.
Thursday 30 December 2021
Nanya to break ground for new DRAM plant in 1H22
Nanya Technology plans to break ground for a new DRAM plant in the first half of 2022 in an effort to meet growing market demand, and expects to invest a total of NT$300 billion (US$10.86...
Thursday 30 December 2021
DRAM spot prices picking up
DRAM spot market prices have been picking up since December 2021, a bullish sign for the near-term price trend, according to industry sources.
Friday 10 December 2021
Chipmakers gearing up for DDR5 output ramp-up
Samsung Electronics and other major DRAM chip vendors are looking to scale up substantially their output for DDR5 memory next year, according to sources at memory module makers.
Wednesday 26 May 2021
Samsung HKMG DDR5
Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.
Friday 1 June 2018
Samsung 10nm 32GB DDR4 SoDIMM
Samsung Electronics has started mass producing 32GB DDR4 memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10nm-class process technology that will allow users to enjoy enriched PC-grade computer games on the go. Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations, according to Samsung. Compared to Samsung's 16GB SoDIMM based on 20nm-class 8Gb DDR4, which was introduced in 2014, the new 32GB module doubles the capacity while being 11% faster and approximately 39% more energy efficient, said the vendor. With a total of 16 of Samsung's newest 16Gb DDR4 DRAM chips (eight chips each mounted on the front and back), the 32GB SoDIMM allows gaming laptops to reach speeds up to 2,666Mbps. A 64GB laptop configured with two 32GB DDR4 modules consumes less than 4.6W in active mode and less than 1.4W when idle, said Samsung. This reduces power usage by approximately 39% and over 25%, respectively, compared to today's leading gaming-oriented laptops, which are equipped with 16GB modules.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.
May 27, 10:24
Empower manufacturing with AI: Into new era of smart manufacturing with collective wisdom
Tuesday 24 May 2022
MSI unveils new lineup at Computex 2022 Online
Thursday 19 May 2022
STAr Technologies unveils one-touch memory test probe card
Thursday 19 May 2022
Computex Focus: DataVan to showcase new retail solutions for new normal
Renesas to reopen Kofu factory as 300mm wafer fab dedicated for power semiconductors
IC design houses bracing for cutback in orders from China handset brands
TSMC to move CoWoS-L technology to commercial production in 2 years
Intel makes key investments to advance datacenter sustainability
Concerns rising over potential foundry overcapacity in 2024
Apple car team reportedly in talks with Korean and Japanese suppliers
AMD, MediaTek reportedly in talks to form JV
TSMC to raise quotes for advanced, mature process technologies by 10-20%
BYD Semiconductor takes major stake in Energen
Is GF a good buy for Intel?
EV penetration to rise to 30% in 2025, says DIGITIMES Research
Non-foundry IC segments gaining weight in HPC era, says DIGITIMES Research
DIGITIMES Research worldwide notebook shipment update – February 2022
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