Innoscience said at midday on December 3 via the Hong Kong Stock Exchange that it had prevailed in its US patent dispute with Infineon, marking a decisive turn in a long-running GaN intellectual property battle. The US International Trade Commission delivered the key ruling, closing a case that had drawn industry-wide attention.
The dispute stemmed from a Section 337 Investigation initiated by Infineon in the US, centred on contested patents involving GaN power device structures and process technologies. Infineon, a long-established force in power semiconductors, has invested in GaN for years. Innoscience, the fast-rising Chinese contender built around a large-scale 8-inch GaN-on-Si IDM model, has moved quickly into global markets and naturally attracted scrutiny from incumbents.
The two companies had already clashed over related GaN technologies in Europe and other jurisdictions, underscoring the increasingly heated global patent race in the GaN sector. On 19 November, the China National Intellectual Property Administration also upheld two of Innoscience's core GaN patents and rejected Infineon's invalidation bids.
The ITC ruling, issued on December 2, US Eastern Time, dismantled Infineon's claims. Of the two asserted patents, one was deemed entirely un-infringed, while the design used in Innoscience's current products was also found not to infringe the other.
Innoscience said the decision carries lasting significance. The result strengthens clarity around its intellectual property and eases customer concerns over supply chain stability, reinforcing the company's push to expand GaN adoption in electric vehicles and data centres.
Article edited by Jack Wu
