Bits + chips
Samsung shifts memory capacity from NAND flash to DDR2
Josephine Lien, Taipei; Carrie Yu, DIGITIMES

After shifting part of its DDR2 capacity to NAND flash at the end of last year, Samsung Electronics moved 20,000 to 30,000 wafers of NAND flash capacity back to DDR2 memory prior to Chinese New Year, with the move expected to start influencing the memory...

The article you are trying to open requires News database subscription. Please sign in if you wish to continue.
Realtime news
© 2019 DIGITIMES Inc. All rights reserved.
Please do not republish, publicly broadcast or publicly transmit content from this website without written permission from DIGITIMES Inc. Please contact us if you have any questions.