Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.

Samsung Electronics has announced that it is mass producing what it calls the industry's first "through silicon via" (TSV) double data rate-4 (DDR4) memory in 128-gigabyte (GB) modules for enterprise servers and data centers. The 128GB TSV DDR4 RDIMM is comprised of a total of 144 DDR4 chips, arranged into 36 4GB DRAM packages, each containing four 20nm-based 8Gb chips assembled with TSV packaging technology. Samsung's 128GB TSV DDR4 RDIMM provides a low-power solution for next-generation servers with speeds at up to 2,400Mbps, while cutting power usage by 50%, compared to using the previous highest capacity DRAM modules - 64GB LRDIMMs, whose four-chip package stacks are hampered by power and speed limitations caused by their use of conventional wire bonding. Samsung added the company will continue to introduce TSV DRAM with higher performance. These will include modules with data transfer speeds of up to 2,667Mbps and 3,200Mbps that help to meet intensifying enterprise server needs, while expanding TSV applications into high bandwidth memory (HBM) and consumer products.