Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.

Samsung Electronics has introduced the industry's first embedded Universal Flash Storage (eUFS) solution for use in next-generation automotive applications. Consisting of 128GB and 64GB versions, the new eUFS solution has been designed for advanced driver-assistance systems (ADAS), next-generation dashboards and infotainment systems that provide connected features for drivers and passengers. Embedded UFS solutions have been used in a variety of mobile applications since early 2015, when Samsung introduced 128GB embedded memory based on the JEDEC UFS 2.0 standard. Configured on JEDEC UFS 2.1, the new Samsung 128GB eUFS can read data at up to 850MB/s, which is approximately 3.4 times faster than the 250MB/s read speed of today's eMMC 5.0 solutions. It also offers about 6.3 times faster random reading than eMMC at 45,000 IOPS.

Samsung Electronics has unveiled removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Samsung's UFS cards come in storage capacities of 256, 128, 64 and 32 GB. The new 256GB UFS removable memory card provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530MB/s which is similar to the sequential read speed of the most widely used SATA SSDs. With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed. Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS. When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed. To shoot 24 large/extra fine JPEG photographs (1,120MB-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.