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NEWS TAGGED JEDEC
Wednesday 2 June 2021
Micron intros 176-layer NAND, 1α DRAM technology
Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company...
Thursday 2 July 2020
GaN and SiC power semiconductor markets set to pass US$1 billion mark in 2021, says Omdia
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to pass US$1 billion in 2021, energized by demand from hybrid & electric...
Monday 9 March 2020
Transistor count trends continue to track with Moore's Law, says IC Insights
The primary yardstick by which the IC industry measures its technological performance and progress remains Moore's Law that states there is a doubling of the number of transistors...
Thursday 15 November 2018
SK Hynix intros 1Ynm 16Gb DDR5 DRAM
SK Hynix has developed 16Gb DDR5 DRAM, which the company claims is the industry's first DDR5 to meet the JEDEC standards, according to the company.
Monday 11 June 2018
Winbond intros new high-performance serial NAND flash for automotive
Winbond Electronics has announced the introduction of the W25N01JW, a high-performance, 1.8V serial NAND flash memory IC delivering a new high in data-transfer rates: 83MB/s via a...
Wednesday 9 May 2018
Cadence DDR5 IP test chip runs with Micron prototype DRAM
Cadence has disclosed a test chip containing next-generation DDR5 memory interface IP, which operates with Micron Technology's prototype DRAM chips. The test chip was fabricated in...
Thursday 30 November 2017
Toshiba Memory unveils 2TB NVMe SSD
Toshiba Memory has enhanced its line-up of client SSDs with the launch of premium models in its XG5-P series. The new NVM Express (NVMe) client SSDs improve on the performance of...
Wednesday 16 August 2017
Globalfoundries demos 2.5D HBM solution
Globalfoundries has demonstrated silicon functionality of a 2.5D packaging solution for its 14nm FinFET FX-14 integrated design system for application-specific integrated circuits...
Tuesday 8 August 2017
Synopsys launches complete HBM2 IP solution offering
EDA vendor Synopsys has introduced its complete DesignWare high bandwidth memory-2 (known as HBM2) IP solution consisting of controller, PHY and verification IP, enabling designers...
Tuesday 18 July 2017
Macronix launches AEC-Q100 full compliant NAND flash memory
Macronix International has launched an AEC-Q100 Grade 2/3 compliant NAND flash memory product. The company added its NAND flash memory has passed all the stringent AEC-Q100 reliability...
Wednesday 27 May 2015
JEDEC announces support for NVDIMM hybrid memory modules
JEDEC Solid State Technology Association has announced that its JC-45 committee has approved the first standards for support of "hybrid" DDR4 memory modules which are defined...
Wednesday 25 February 2015
JEDEC publishes eMMC 5.1 standard
JEDEC Solid State Technology Association has announced the publication of JESD84-B51: Embedded MultiMediaCard (eMMC), Electrical Standard (5.1). eMMC v5.1 defines new features and...
Wednesday 4 September 2013
Chip carrier packaging grows on widespread adoption of QFN package, says IC Insights
Advanced packaging of semiconductor chips has emerged as a key enabler in many of today's electronic system products. While much attention with regard to IC packaging is on 3D stacking...
Wednesday 26 September 2012
JEDEC publishes DDR4 standard
Memory industry standards body JEDEC Solid State Technology Association has announced the initial publication of Synchronous DDR4 standard. JEDEC DDR4 (JESD79-4) has been defined...
Monday 16 April 2012
JEDEC to standardize non-volatile wireless memory
The JEDEC Solid State Technology Association has announced that its JC-64 Committee for embedded memory storage and removable memory cards has formed a subcommittee focused on the...
Monday 11 June 2018
Winbond W25N01JW
Winbond Electronics' W25N01JW is a high-performance, 1.8V serial NAND flash memory IC delivering a data-transfer rate of 83MB/s via a quad serial peripheral interface (QSPI). The new high-performance serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s. The Winbond 1.8V W25N01JW chip can replace SPI NOR flash memory in automotive applications, such as data storage for instrument clusters or the center information displays (CIDs), the company indicated. This is important for automotive OEMs because the adoption of more sophisticated graphics displays in the instrument cluster, and larger display sizes of seven inches and above in the CID, is increasing system memory requirements to capacities of 1Gbit and higher, the company continued. At these capacities, serial NAND flash has a markedly lower unit cost than that of SPI NOR flash, and occupies a smaller board area per megabit of storage capacity. The W25N01JW also meets strict automotive requirements for quality and reliability, Winbond noted. Built with single-level sell (SLC) memory technology, and implementing 1-bit error correction code (ECC) on all read and write operations, it complies with the endurance, retention and quality requirements of the AEC-Q100 standard and relevant JEDEC specs. The W25N01JW is available for sampling today in a capacity of 1Gbit. A two-chip implementation in dual-quad I/O mode provides 2Gbits of memory capacity and a maximum data transfer rate of 166MB/s. The chip is available in industrial grade and in an extended-temperature automotive grade version operating at up to 105-degrees C.
Wednesday 13 July 2016
Samsung 256GB UFS card
Samsung Electronics has unveiled removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Samsung's UFS cards come in storage capacities of 256, 128, 64 and 32 GB. The new 256GB UFS removable memory card provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530MB/s which is similar to the sequential read speed of the most widely used SATA SSDs. With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed. Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS. When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed. To shoot 24 large/extra fine JPEG photographs (1,120MB-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.