Micron intros 176-layer NAND, 1α DRAM technology

Jessie Shen, DIGITIMES, Taipei 0

Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company claims is the industry's first Universal Flash Storage (UFS) 3.1 solution...

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