Samsung Electronics has expanded its DDR5 DRAM memory portfolio with a 512GB DDR5 module based on high-K metal gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200Mbps, the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications. Samsung indicated the new DDR5 utilizes highly advanced HKMG technology that has been traditionally used in logic semiconductors. With continued scaling down of DRAM structures, the insulation layer has thinned, leading to a higher leakage current. By replacing the insulator with HKMG material, Samsung's DDR5 will be able to reduce the leakage and reach new heights in performance. This new memory will also use approximately 13% less power, making it especially suitable for datacenters where energy efficiency is becoming increasingly critical. Leveraging through-silicon via (TSV) technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB.

Intel has launched 11 highly integrated 10th Gen Intel Core processors, manufactured via Intel's 10nm process and designed for 2-in-1s and notebooks. The processors bring high-performance artificial intelligence (AI) to the PC at scale, feature new Intel Iris Plus graphics and Intel Wi-Fi 6 (Gig+) and Thunderbolt 3. Systems are expected from PC manufacturers for the holiday season. In addition to performance and responsiveness gains, AI, graphics, connectivity and I/O are optimized on the SoC for a solution that delivers a feature-rich suite of capabilities for OEMs to create notebooks.