Samsung to fab 1Gbit DDR2 SDRAM at 80nm

Press release, August 29; Esther Lam, DIGITIMES Asia 0

With its DDR2 in all densities already being fabricated at the 80-nanometer node, Samsung Electronics today announced the mass production of 1Gbit DDR2 DRAM. The South Korea DRAM maker notes that the advanced process node enables a package size 36%...

The article requires paid subscription. Subscribe Now