Samsung Electronics is showing renewed momentum in the AI memory race as it deepens ties with both OpenAI and AMD, two partnerships that could strengthen its position in the next-generation HBM4 ecosystem after ceding early ground in AI memory to rival SK hynix.

Samsung Electronics plans to manufacture the base die for its next-generation HBM5 memory using a 2nm gate-all-around foundry process, as faster high-bandwidth memory raises pressure on logic performance, power efficiency and heat management.

SK Hynix is recruiting engineers in San Jose to co-design 3D stacked DRAM-on-logic with US customers, extending its custom memory strategy beyond high-bandwidth memory and toward on-device AI applications.

Surging AI server demand is reshaping supply and demand across the global memory market. With DRAM prices rising sharply over the past year, the resulting cost pressure is beginning to spill into the automotive industry.

Intel is considering SK Hynix as a potential partner to help operate its delayed Ohio semiconductor project, Semafor reported, after the South Korean memory maker formally denied pursuing an acquisition of the site.

Samsung Electronics is preparing a die-to-wafer hybrid bonding production line with about 50 bonders at its Pyeongtaek campus for next-generation high-bandwidth memory and logic chips, according to The Elec.

Samsung is in talks to invest about EUR1 billion (approx. US$1.14 billion) in French AI startup Mistral as part of a wider fundraising round, the Financial Times reported, citing people familiar with the matter.