Samsung Electronics and SK Hynix are reportedly stepping up efforts to advance hybrid bonding for next-generation high-bandwidth memory (HBM), as the two memory makers move to secure key packaging technologies for AI-driven demand, according to The Elec.
Micron is reportedly developing vertically stacked graphics DRAM (GDDR) products to address shifting AI memory demand, according to ET News.
As AI demand drives high-performance computing and device upgrades, the global memory market is entering an upswing. China-linked players, including GigaDevice, CXMT, and Biwin, are moving to secure upstream wafer supply through contracts lasting up to two years, pointing to stronger demand visibility and firmer pricing expectations.
Samsung Electronics has reportedly begun mass production of 236-layer NAND flash at its Xi'an plant in China, marking a key step in its transition to higher-layer memory as demand from artificial intelligence applications accelerates.


