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NEWS TAGGED MOBILE DRAM
Tuesday 10 May 2022
Memory prices to rebound in 2H22, say IC distributors
Memory prices will be trending downward in the second quarter of 2022, but are likely to rebound in the second half of the year when new smartphones hit market shelves, according...
Wednesday 6 April 2022
Memory firms cautious about end-market demand prospects
Brand vendors, downstream memory module makers and distributors have all turned cautious about end-market demand prospects this year, judging from disappointing sales of consumer...
Tuesday 4 January 2022
DDR5 key to stimulating overall DRAM bit supply growth in 2022
The overall DRAM bit supply growth is expected to decelerate in 2022, but demand for DDR5 memory could still be providing momentum, according to industry sources.
Friday 12 November 2021
DRAM prices to retreat in 4Q21 after strong gains
DRAM ASPs soared 41% through the first eight months of 2021, rising from US$3.37 in January to US$4.77 in August. ASPs slipped 3% to US$4.62 in September, still a 37% surge compared...
Monday 12 July 2021
Adata expects double-digit rise in DRAM contract prices
Memory module maker Adata Technology expects DRAM contract prices to register a double-digit sequential surge in the third quarter of 2021, with an over 15% rise in low-power DRAM...
Monday 5 July 2021
OSATs see significant surge in 2H21 memory backend demand
Taiwan memory backend specialists are optimistic about their business prospects for the second half of the year as memory demand for handset and other consumer electronics applications...
Monday 8 March 2021
SK Hynix announces mass production of 18GB LPDDR5 mobile DRAM
SK Hynix has kicked off mass production of 18GB LPDDR5 mobile DRAM, which offers the largest capacity in the industry, according to the company.
Friday 29 January 2021
Micron delivers 1α DRAM technology
Micron Technology has announced volume shipments of 1α (1-alpha) node DRAM products.
Friday 4 September 2020
Memory chipmakers hold nearly 4 months of inventories
Samsung Electronics and some others have held nearly four months of DRAM and NAND flash inventories on average, due to a slowdown in orders for datacenter applications and overall...
Tuesday 1 September 2020
Samsung begins mass production of 16Gb LPDDR5 DRAM
Samsung Electronics has announced mass production of 16Gb LPDDR5 mobile DRAM, using extreme ultraviolet (EUV) technology, at its second production line in Pyeongtaek.
Thursday 23 July 2020
SK Hynix posts profit hike in 2Q20
SK Hynix has reported operating profits of KRW1.95 trillion (US$1.62 billion) on consolidated revenue of KRW8.61 trillion for the second quarter of 2020.
Thursday 12 March 2020
DRAM vendors enhance LPDDR5 offerings
Memory vendors have enhanced their LPDDR5 mobile DRAM offerings to include those for midrange 5G-capable smartphones.
Monday 10 February 2020
Winbond swings to loss in 4Q19
Winbond Electronics, a maker of specialty DRAM and flash memory, swung to its first quarterly loss in 27 quarters.
Wednesday 5 February 2020
Mobile DRAM demand uncertainty emerges
Mobile DRAM demand for smartphones is likely to disappoint in the first half of 2020, as the coronavirus outbreak may hit sales of new 5G-compatible phones, according to market sou...
Wednesday 15 January 2020
PTI expects sales growth in 1Q20
Backend house Powertech Technology (PTI) expects its revenues to be higher than year-ago levels in the first quarter of 2020, and is positive about its performance in all of the ye...
Thursday 2 June 2016
Samsung Electronics has begun mass producing NVM Express (NVMe) PCIe solid state drive (SSD) in a single ball grid array (BGA) package for next-generation PCs and ultra-slim notebook PCs. The new BGA NVMe SSD, named PM971-NVMe, features a compact package that contains all essential SSD components including NAND flash memory, DRAM and controller. Configuring the PM971-NVMe SSD in a single BGA package was enabled by combining 16 of Samsung's 48-layer 256Gb V-NAND flash chips, one 20nm 4Gb LPDDR4 mobile DRAM chip and a high-performance Samsung controller. The new SSD is 20x16x1.5mm and weighs only about one gram. The single-package SSD's volume is approximately a 100th of a 2.5-inch SSD or HDD, and its surface area is about a fifth of an M.2 SSD. The PM971-NVMe SSD enables sequential read and write speeds of up to 1,500MB/s and 900MB/s respectively, when TurboWrite technology is used. The performance figures can be directly compared to transferring a 5GB-equivalent, Full-HD movie in about three seconds or downloading it in about six seconds. It also boasts random read and write IOPS of up to 190K and 150K respectively. The PM971-NVMe SSD line-up will be available in 512GB, 256GB and 128GB storage options. Samsung will start providing the new SSDs to its customers in June worldwide.
Friday 18 September 2015
Samsung 12Gb LPDDR4 DRAM
Samsung Electronics has announced that it is mass producing 12Gb LPDDR4 (low power, double data rate 4) mobile DRAM chips based on its 20nm process technology. The new LPDDR4 is expected to significantly accelerate the adoption of high-capacity mobile DRAM worldwide, Samsung indicated. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, the company said. Compared to the preceding 20nm-based 8Gb LPDDR4, the 12Gb version is more than 30% faster at 4,266Mbps, and is twice as fast as DDR4 DRAM for PCs, while consuming 20% less energy, Samsung claimed. Manufacturing productivity of the 12Gb LPDDR4 has been raised more than 50% over that of 20nm-class 8Gb LPDDR4, the company said. The 12Gb LPDDR4 enables 3GB or 6GB of mobile DRAM in a single package using two chips and four chips respectively, while being the only solution that can provide a 6GB LPDDR4 package, Samsung said. Based on the new 12Gb LPDDR4, the 6GB package can fit into the same space used for 3GB LPDDR4 packages currently available, the company indicated.
Tuesday 10 February 2015
Samsung ePoP memory for smartphones
Samsung Electronics is mass producing ePoP (embedded package on package) memory, a single memory package consisting of 3GB LPDDR3 DRAM, 32GB eMMC and a controller. For use in high-end smartphones, the thin ePoP can be stacked directly on top of the mobile processor. The 3GB LPDDR3 mobile DRAM inside the ePoP operates at an I/O data transfer rate of 1,866Mb/s, and sports a 64-bit I/O bandwidth. Because of its thinness and heat-resistant properties, Samsung's smartphone ePoP does not need any space beyond the 225mm2 (15 by 15mm) taken up by the mobile application processor. A conventional PoP (also 15 by 15mm), consisting of the mobile processor and DRAM, along with a separate eMMC (11.5mm by 13mm) package, takes up 374.5mm2. The single-package configuration also meets the semiconductor package height ceiling of 1.4mm, Samsung said.
May 19, 12:09
Computex Focus: DataVan to showcase new retail solutions for new normal
Thursday 19 May 2022
STAr Technologies unveils one-touch memory test probe card
Wednesday 18 May 2022
Advanced vision AI eliminates potential risks in cleanroom environments for semiconductor and panel manufacturers
Wednesday 11 May 2022
NeoGene unveils novel ultra-thin heat-pipe-array vapor chamber technology for ultra-high-density power battery pack application
Notebook production in China unlikely to be fully restored until July
IC design houses under pressure to drop prices
Brand notebook vendors cut orders for 2022
YMTC sampling 192-layer 3D NAND chips
Datacenters to become biggest consumer of NAND flash in 2023-2024
Apple car team reportedly in talks with Korean and Japanese suppliers
AMD, MediaTek reportedly in talks to form JV
TSMC to raise quotes for advanced, mature process technologies by 10-20%
BYD Semiconductor takes major stake in Energen
Is GF a good buy for Intel?
EV penetration to rise to 30% in 2025, says DIGITIMES Research
Non-foundry IC segments gaining weight in HPC era, says DIGITIMES Research
DIGITIMES Research worldwide notebook shipment update – February 2022
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