Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

IMEC has successfully qualified a chipset consisting of custom high-quality EUV sensor dies. These are now being integrated in ASML's NXE:3100 EUV lithography tools in the field, improving the tools' overlay and critical dimension (CD) tool performance, IMEC said. The sensors were processed according to ASML's custom designs and specifications, with focus on superior lifetime and sensitivity to direct and high EUV irradiation doses. Two of the sensors are designed to calibrate, align and focus tool's lens systems. They have been integrated in functional sensor modules, and are being integrated in the NXE:3100 machines in the field. A third sensor is designed to monitor the NXE:3300's EUV dose. IMEC revealed that the next milestone in progress is to build and qualify the different sensors for the NXE:3300 by the end of 2011.