Sun, May 22, 2022
Before going to press
7 days news
Chips + Components
Displays + Photonics
IT + CE
Mobile + Telecom
Battery + Green energy
Asia Supply Chain 100
Asia Supply Chain 100
Market Cap 100
Internet, Cloud, AI
Accelerators & incubators
Research on demand
Products & services
China smartphone AP
Special Report Databases
Commentary and analysis
Biz Focus home
CONNECT WITH US
Three Mirrowed In-House Testing Labs
Global EV sales and battery capacity
May 20, 17:56
NEWS TAGGED 20NM
Monday 14 February 2022
Winbond to boost 20nm chip output at new fab in southern Taiwan
Specialty DRAM and flash memory chipmaker Winbond Electronics expects to ramp up monthly output at its new 12-inch fab in Kaohsiung, southern Taiwan to 10,000 wafers by the fourth...
Tuesday 8 February 2022
Winbond to kick off construction of phase-2 facility at new plant
Specialty DRAM specialist Winbond Electronics plans to advance its second-phase facility construction at its new plant in Kaohsiung, southern Taiwan to ease tight capacity for specialty...
Tuesday 14 December 2021
CXMT to make 17nm DDR3 memory
China-based memory foundry ChangXin Memory Technologies (CXMT) is gearing up for its entry into the DDR3 memory market segment with its in-house developed 17nm process technology,...
Thursday 31 December 2020
Winbond expects new plant to come online in 2022
Winbond Electronics is constructing a new 12-inch wafer fab in Kaohsiung, southern Taiwan, which is scheduled to come online in the first half of 2022, according to the specialty...
Wednesday 18 November 2020
Wafer capacity by feature size shows strongest growth at sub-10nm
IC capacity for leading-edge (sub-10nm) processes is expected to grow and become the largest portion of monthly installed capacity across the industry beginning in 2024, according...
Monday 15 June 2020
Notebook demand remains robust, says Winbond chairman
Chip orders for notebooks are expected to stay robust until the end of the third quarter, according to Arthur Chiao, chairman for specialty DRAM and flash memory maker Winbond Elec...
Monday 10 February 2020
Winbond swings to loss in 4Q19
Winbond Electronics, a maker of specialty DRAM and flash memory, swung to its first quarterly loss in 27 quarters.
Monday 9 December 2019
Winbond slowing down new fab construction
Specialty DRAM and flash memory chipmaker Winbond Electronics is slowing down constructing and equipping its new 12-inch wafer plant in Kaohsiung, southern Taiwan, according to company...
Monday 28 October 2019
Winbond posts profit growth in 3Q19
Specialty DRAM and flash memory maker Winbond Electronics has announced net profit increased 27.9% sequentially to NT$591 million (US$19.3 million) in the third quarter of 2019. EPS...
Thursday 26 September 2019
TSMC leading-edge fab investments set stage for sale surge in 2H19
Taiwan Semiconductor Manufacturing Company's heavy investments in advanced wafer-fab technology are set to pay off significantly for the world's largest silicon foundry as it continues...
Friday 23 August 2019
Xilinx intros FPGA featuring 9 million system logic cells
Xilinx has announced the expansion of its 16nm Virtex UltraScale+ family to now include what the company claims is the world's largest FPGA, the Virtex UltraScale+ VU19P, with 35...
Tuesday 23 July 2019
Winbond on track to open new memory fab by 2021
Specialty DRAM and flash memory chipmaker Winbond Electronics on July 22 held a beam-raising ceremony for its new 12-inch wafer plant in Kaohsiung, southern Taiwan. The new facility...
Monday 17 June 2019
Winbond to open new fab in southern Taiwan by 2021
Winbond Electronics expects to start operating a new 12-inch wafer plant in Kaohsiung, southern Taiwan by 2021, when the DRAM and flash memory chipmaker has its in-house developed...
Tuesday 11 June 2019
China memory maker CXMT to roll out 8Gb LPDDR4 DRAM by end-2019
China-based DRAM maker ChangXin Memory Technologies (CXMT) is stepping up DRAM production deployments as it will kick off commercial runs of its production lines by the end of 2019...
Monday 15 October 2018
Advanced-node technology driving TSMC revenue per wafer, says IC Insights
The average revenue generated from processed wafers among the four biggest pure-play foundries - TSMC, Globalfoundries, UMC and SMIC - is expected to be US$1,138 in 2018 when expressed...
Thursday 2 June 2016
Samsung Electronics has begun mass producing NVM Express (NVMe) PCIe solid state drive (SSD) in a single ball grid array (BGA) package for next-generation PCs and ultra-slim notebook PCs. The new BGA NVMe SSD, named PM971-NVMe, features a compact package that contains all essential SSD components including NAND flash memory, DRAM and controller. Configuring the PM971-NVMe SSD in a single BGA package was enabled by combining 16 of Samsung's 48-layer 256Gb V-NAND flash chips, one 20nm 4Gb LPDDR4 mobile DRAM chip and a high-performance Samsung controller. The new SSD is 20x16x1.5mm and weighs only about one gram. The single-package SSD's volume is approximately a 100th of a 2.5-inch SSD or HDD, and its surface area is about a fifth of an M.2 SSD. The PM971-NVMe SSD enables sequential read and write speeds of up to 1,500MB/s and 900MB/s respectively, when TurboWrite technology is used. The performance figures can be directly compared to transferring a 5GB-equivalent, Full-HD movie in about three seconds or downloading it in about six seconds. It also boasts random read and write IOPS of up to 190K and 150K respectively. The PM971-NVMe SSD line-up will be available in 512GB, 256GB and 128GB storage options. Samsung will start providing the new SSDs to its customers in June worldwide.
Friday 18 September 2015
Samsung 12Gb LPDDR4 DRAM
Samsung Electronics has announced that it is mass producing 12Gb LPDDR4 (low power, double data rate 4) mobile DRAM chips based on its 20nm process technology. The new LPDDR4 is expected to significantly accelerate the adoption of high-capacity mobile DRAM worldwide, Samsung indicated. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, the company said. Compared to the preceding 20nm-based 8Gb LPDDR4, the 12Gb version is more than 30% faster at 4,266Mbps, and is twice as fast as DDR4 DRAM for PCs, while consuming 20% less energy, Samsung claimed. Manufacturing productivity of the 12Gb LPDDR4 has been raised more than 50% over that of 20nm-class 8Gb LPDDR4, the company said. The 12Gb LPDDR4 enables 3GB or 6GB of mobile DRAM in a single package using two chips and four chips respectively, while being the only solution that can provide a 6GB LPDDR4 package, Samsung said. Based on the new 12Gb LPDDR4, the 6GB package can fit into the same space used for 3GB LPDDR4 packages currently available, the company indicated.
Friday 23 January 2015
Samsung Electronics has begun mass producing 8Gb GDDR5 DRAM based on the company's 20nm process technology. Designed for use in graphics cards for PCs and supercomputing applications, and on-board graphics memory for game consoles and notebook PCs, discrete graphics DRAM provides an extensive amount of bandwidth to process large high-quality graphically-oriented data streams. The memory operates with an I/O data rate of 8Gbps per pin, which is more than four times faster than the DDR3 DRAM widely used in notebook PCs today, and each chip can process data at 32-bit I/O rate. With this new 20nm 8Gb GDDR5, Samsung said it has completed its line-up of 8Gb DRAM solutions based on its 20nm process technology, covering the server, PC, mobile and graphics memory markets.
May 19, 12:09
Computex Focus: DataVan to showcase new retail solutions for new normal
Thursday 19 May 2022
STAr Technologies unveils one-touch memory test probe card
Wednesday 18 May 2022
Advanced vision AI eliminates potential risks in cleanroom environments for semiconductor and panel manufacturers
Wednesday 11 May 2022
NeoGene unveils novel ultra-thin heat-pipe-array vapor chamber technology for ultra-high-density power battery pack application
Notebook production in China unlikely to be fully restored until July
IC design houses under pressure to drop prices
Brand notebook vendors cut orders for 2022
YMTC sampling 192-layer 3D NAND chips
Datacenters to become biggest consumer of NAND flash in 2023-2024
Apple car team reportedly in talks with Korean and Japanese suppliers
AMD, MediaTek reportedly in talks to form JV
TSMC to raise quotes for advanced, mature process technologies by 10-20%
BYD Semiconductor takes major stake in Energen
Is GF a good buy for Intel?
EV penetration to rise to 30% in 2025, says DIGITIMES Research
Non-foundry IC segments gaining weight in HPC era, says DIGITIMES Research
DIGITIMES Research worldwide notebook shipment update – February 2022
Sorry, the page you are trying to open is available only for our paid subscribers.
to read more
New users, please