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Friday 30 July 2021
Intel could challenge TSMC in next 5 years
If Intel is able to advance its process technology on schedule, it could regain its foundry technology leadership that has been taken by TSMC in the next five years, according to...
Wednesday 14 July 2021
Intel seeks to regain advanced manufacturing lead
Intel is eyeing to regain its manufacturing lead, particularly advanced process manufacturing. Intel's capex for 2021 will be a nearly 10-year high for the company, despite being...
Monday 12 July 2021
Nanya expects DRAM prices to continue rally
DRAM contract prices, which registered a substantial increase in the second quarter of 2021, are expected to continue their rally in the third quarter, according to chipmaker Nanya...
Tuesday 6 July 2021
Nanya sees 2Q21 revenue hit 11-quarter high
DRAM chipmaker Nanya Technology has reported revenue of NT$22.64 billion (US$808.9 million) for the second quarter of 2021, the highest in 11 quarters.
Friday 18 June 2021
Nanya to see over 25% revenue gains in 2Q21 on rising DRAM ASPs
Nanya Technology is expected to post revenue growth of 25% or more sequentially in the second quarter of 2021, buoyed by sharp DRAM price rises, particularly for DDR3 solutions, according...
Tuesday 27 April 2021
PCB supply chain eyeing replacement demand stoked by new server CPUs
Taiwan's PCB supply chain players are optimistic that they will receive a boost from the upcoming server replacement demand to be driven by rollouts of new processors by Intel, according...
Tuesday 27 April 2021
Intel to defend market share with new 10nm server chips
Intel with its new-generation 10nm server chips will be striving to defend its market dominance.
Wednesday 21 April 2021
Nanya to defend market share with new chip plant, says president
Nanya Technology holds an around 3% share of the DRAM market, and is striving to defend its global market share with an additional 12-inch wafer fab set to come online in 2024, according...
Tuesday 20 April 2021
DRAM maker Nanya to build new 12-inch fab
Taiwan-based DRAM maker Nanya Technology has announced plans to establish a new 12-inch wafer fab designed for the company's in-house developed 10nm-class and EUV-based process man...
Monday 12 April 2021
Nanya posts profit hike in 1Q21
Taiwan-based DRAM maker Nanya Technology has reported net profit hiked 192.7% sequentially to NT$2.71 billion (US$95 million) in the first quarter of 2021. EPS for the quarter came...
Thursday 25 February 2021
SK Hynix strikes 5-year deal with ASML for EUV equipment supply
SK Hynix has signed a 5-year contract worth KRW4.75 trillion (US4.3 billion) with ASML to procure extreme ultraviolet (EUV) lithography systems, local media reports in South Korea...
Wednesday 27 January 2021
Cooling module makers expect shipments for new-gen servers to boost ASPs
Cooling module makers expect shipments for new-generation servers based on Intel's 10nm Ice Lake processors to push up their product ASPs.
Friday 15 January 2021
Intel expected to fully advance to 10nm in 2021
Intel is expected to see strong growths in sales and profits in 2021 thanks to the releases of new-generation 10nm CPUs, according to sources from the upstream supply chain.
Wednesday 13 January 2021
Server makers turn optimistic about 2021 on Intel new processors
With Intel ramping up its 10nm Ice Lake Xeon server processor output, Taiwan's server makers have turned optimistic about their shipment prospects for 2021 and may embrace the strongest-ever...
Monday 11 January 2021
DRAM prices to rise through 2Q21, says Nanya
DRAM prices will start to rally in the first quarter and rise through the second quarter of 2021, due to undersupply in the market, according to chipmaker Nanya Technology.
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.