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NEWS TAGGED 10NM
Tuesday 30 May 2023
1c DRAM key to determining memory market leadership in 2024
Samsung, SK Hynix, and Micron are all technically capable of mass producing the fifth-generation 10nm 1b or 1β (Beta) DRAM, but it is predicted that the sixth-generation 10nm...
Wednesday 26 April 2023
SK Hynix remains in the red, sees sales rebound ahead
SK Hynix saw its operating loss widen to about KRW3.4 trillion (US$2.54 billion) in the first quarter of 2023 from KRW1.9 trillion in the prior quarter, when revenue declined 34%...
Thursday 23 February 2023
DRAM prices to hit bottom in 1Q23, says Nanya
First-quarter 2023 will be the bottom for DRAM memory prices, according to Nanya Technology, a Taiwan-based DRAM chipmaker.
Tuesday 7 February 2023
China revving up homegrown chipmaking equipment development
Among the growing ambiguity in the global environment, a number of well-developed semiconductor equipment manufacturers based in China have emerged, with some already capable...
Monday 30 January 2023
SK Hynix introduces LPDDR5T RAM at up to 9.6 Gbps
SK Hynix has developed what the company claims to be the world's fastest mobile DRAM, LPDDR5 Turbo (LPDDR5T), with sample deliveries kicking off.
Monday 26 September 2022
Winbond specialty DRAM cuts into largest e-bike supply chain in Europe
Taiwan's memory maker Windbond Electronics has cut into the supply chain of Europe's largest e-bike maker with its specialty DRAM, and is also actively developing sales of its flash...
Tuesday 2 August 2022
Tightened US ban on China chipmakers to have little impact on Taiwan
With the US tightening restrictions on China's access to chipmaking equipment, Taiwan-based fab tool suppliers engaged in the supply chain of SMIC and other China-based chipmakers...
Friday 27 May 2022
Nanya gearing up for 10nm process output ramp-up
DRAM chipmaker Nanya Technology will be ramping up its first-generation 10nm process output in the second half of 2022, according to company chairman Chia-Chau Wu.
Thursday 24 March 2022
Samsung, Intel keen to take slices of foundry market from TSMC
Samsung Electronics and Intel have both stepped up efforts to expand their respective foundry businesses, eyeing bigger slices of the global foundry market particularly in the advanced...
Thursday 30 December 2021
Nanya to break ground for new DRAM plant in 1H22
Nanya Technology plans to break ground for a new DRAM plant in the first half of 2022 in an effort to meet growing market demand, and expects to invest a total of NT$300 billion (US$10.86...
Thursday 2 December 2021
Will Samsung 3nm GAA process win over major TSMC clients?
Samsung Electronics has been actively pursuing 3nm GAA chip orders, with speculation that AMD and Qualcomm could be among the first customers of its newer foundry process technology...
Thursday 23 September 2021
Intel to hold groundbreaking ceremony for new fabs on September 24
Intel is scheduled to hold a groundbreaking ceremony for the construction of two new fabs in Arizona on September 24. Company CEO Pat Gelsinger and local government officials will...
Monday 13 September 2021
Intel offering competitive prices to maintain server market leadership
Intel, facing AMD's fierce competition in the server market, is offering more competitive pricing for its server CPUs, with many cloud computing datacenter operators who have begun...
Friday 30 July 2021
Intel could challenge TSMC in next 5 years
If Intel is able to advance its process technology on schedule, it could regain its foundry technology leadership that has been taken by TSMC in the next five years, according to...
Wednesday 14 July 2021
Intel seeks to regain advanced manufacturing lead
Intel is eyeing to regain its manufacturing lead, particularly advanced process manufacturing. Intel's capex for 2021 will be a nearly 10-year high for the company, despite being...
Tuesday 23 January 2018
Samsung 1ynm DDR4
Samsung Electronics has begun mass producing the second generation of 10nm-class (1y-nm), 8Gb DDR4 DRAM. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions, Samsung said. Samsung's 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30% productivity gain over the company's 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4's performance levels and energy efficiency have been improved about 10% and 15% respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600Mbps per pin, compared to 3,200Mbps of the company's 1x-nm 8Gb DDR4. To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive "air spacer" scheme. In the cells of Samsung's 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity. Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.
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Global server shipment forecast and industry analysis, 2022
China vendors see smartphone shipments down on year in 4Q22 and 1Q23, says DIGITIMES Research
Smartphone shipments to China slip over 10% sequentially in 1Q23, but to stay flat in 2Q23, says DIGITIMES Research
Global foundry revenue to drop 9% in 2023, says DIGITIMES Research