Monday 31 August 2026
Tescan Connects Buried Defect Localization to Nanoscale Analysis at SEMICON
Tescan will participate in SEMICON Taiwan 2026 from September 2 to 4 at Booth R8201, 4F, Taipei Nangang Exhibition Center Hall 2 (TaiNEX 2). Under the theme "Streamlined Failure Analysis for Advanced Packaging," Tescan will present a correlative workflow that connects defect localization, rapid access to regions of interest (ROIs), site-specific sample preparation, and nanoscale characterization.Chiplet architectures, heterogeneous integration, advanced packaging, high-bandwidth memory (HBM), and wide-bandgap power devices are increasing structural complexity and introducing more diverse material stacks. As critical defects are often buried within packages or devices, failure analysis (FA) laboratories need an efficient end-to-end workflow that preserves sample context from non-destructive inspection through root-cause analysis.From Defect Localization to Nanoscale AnalysisTescan structures the workflow across four stages: Inspect, Access, Prepare, and Analyze. Tescan UniTOM HR 2 micro-CT provides non-destructive 3D imaging of internal package structures, warpage, and potential defects. Tescan FemtoChisel then uses gas-assisted femtosecond laser processing to expose buried ROIs, followed by precise cross-sectioning and sample preparation with Tescan SOLARIS X 2 plasma FIB-SEM under real-time SEM guidance. Tescan TENSOR 4D-STEM completes the workflow with nanoscale structural and materials characterization.By maintaining defect location and sample context across successive stages, the integrated workflow reduces repeated localization, rework, and unnecessary sample transfers. This helps R&D, process engineering, yield enhancement, and high-volume manufacturing (HVM) teams shorten time-to-answer and improve confidence in analytical results.Femtosecond Laser Processing Accelerates Workflows for Large, Complex SamplesDesigned for semiconductor sample preparation and failure analysis, Tescan FemtoChisel supports cross-sectioning, decapsulation, delayering, cavity preparation, and large-volume material removal. Gas-assisted femtosecond laser processing increases throughput while preserving the structural integrity and surface quality required for downstream high-resolution SEM, FIB-SEM, or TEM/STEM characterization.FemtoChisel Forum Presentation: From Hours to MinutesOn 2026, September 4 from 15:05 to 15:30, Hervé Macé, Semiconductor Solution Sales Development Director at Tescan, will present at the Semiconductor Advanced Inspection and Metrology Forum in Room 402 on the fourth floor of TaiNEX 1.Tescan FemtoChisel: From Hours to Minutes: High-Throughput Gas-Assisted Femtosecond Laser Workflows for Advanced Semiconductor Analysis and CharacterizationThe presentation will highlight how gas-assisted femtosecond laser processing accelerates sample preparation for large structures and complex material stacks while maintaining the quality required for downstream high-resolution characterization.Explore the Workflow at Booth R8201Tescan will host SPIN. MATCH. ENJOY. at Booth R8201 from 10:00 on 2026, September 2 and 3. Visitors can match Tescan technologies with their signature drinks while learning how non-destructive inspection, laser-based ROI access, and FIB-SEM sample preparation work together. Tescan specialists will also be available to discuss real-world failure analysis challenges and application requirements. Learn moe about Tescan at SEMICON Taiwan 2026 here.