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Samsung reportedly exits 2D NAND, converts Hwaseong Line 12 to 1c DRAM end fab

Levi Li, Lillian Chen, Taipei, DIGITIMES Asia 0

Credit: DIGITIMES

Samsung Electronics will halt 2D NAND flash production at its Hwaseong Line 12 and convert the facility into a 1c DRAM end fab, formally exiting planar NAND manufacturing and reallocating capacity toward advanced memory nodes.

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