CONNECT WITH US

China's 12-inch SiC leap: SICC, Jingsheng in spotlight

Staff reporter, Taipei; Levi Li, DIGITIMES Asia 0

Credit: SICC

The global race in third-generation semiconductors is intensifying, with larger silicon carbide (SiC) wafers seen as critical to cutting costs and enhancing power device performance. While global leaders remain centered on 6-inch and 8-inch wafers,...

The article requires paid subscription. Subscribe Now