Samsung reportedly cracks 1c DRAM yield hurdle, positions HBM4 for AI rebound

Amy Fan, Taipei; Levi Li, DIGITIMES Asia Monday 21 July 2025 0

Credit: AFP

Samsung Electronics is preparing a major push to reclaim ground in the high-bandwidth memory (HBM) market, where it has lagged behind SK Hynix and Micron. Its sixth-generation 1c DRAM, built for HBM4, has reportedly hit a critical production milestone,...

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