In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs.
Mitsubishi Electric, a veteran manufacturer of silicon power semiconductors, has a relatively low market share in the silicon carbide (SiC) power semiconductor field. The company hopes its new power modules will secure a market position in competition with IDM giants like STMicroelectronics.
According to reports from Nikkei, Mitsubishi Electric unveiled the J3 series of power semiconductor modules in January 2024. This series represents the latest generation of the company's Transfer Molded Power Module (T-PM).
The J3 series marks the first time Mitsubishi Electric has introduced SiC power devices in its automotive power semiconductor modules, specifically featuring SiC-MOSFETs. These products apply to electric vehicles (EVs), including battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs).
Compared to existing power semiconductor modules, the SiC-MOSFET power module in the J3 series reduces volume by 60%, contributing to the downsizing of inverters used in motor drives. The improvement is achieved through a fusion method that enhances the thermal resistance by 30%, resulting in a more compact module.
Mitsubishi Electric states that its SiC power module, when compared to European competitors, has the smallest volume for the same rated capacity。 This allows it to reach optimal levels of energy density.
The J3 series power modules are designed based on SiC-MOSFETs. They also include products with silicon power devices (RC-IGBTs) to cater to diverse demands in the rapidly expanding xEV market.
Currently, STMicroelectronics dominates the SiC power device market with a market share of around 40%, along with German Infineon and US-based Wolfspeed, collectively holding over 70% of the market. Among Japanese manufacturers, Rohm has a relatively high market share.
Mitsubishi Electric's market share in SiC power devices is only around 1%. This places significant responsibility on the new product to capture market share in competition with established major players.
Samples of the J3 series power modules will be shipped to customers in late March 2024, with mass production expected to commence in 2025. Contributions to revenue are anticipated to begin in the fiscal year 2025 (April 2025 to March 2026), allowing observation of changes in market share for SiC power devices.
Since 1997, Mitsubishi Electric has been supplying power devices for hybrid electric vehicles (HEVs) and has been installed in approximately 26 million xEVs by 2022. In addition to automotive applications, these power devices are supplied for railways, machine tools, and more.
Recognizing SiC power devices as a source of medium- to long-term growth, Mitsubishi Electric has invested in expanding production capacity. The company has built a new SiC power semiconductor facility, introducing an 8-inch SiC production line and expanding its existing 6-inch SiC production line.
Furthermore, Mitsubishi Electric has jointly invested with inverter manufacturer Denso in Coherent SiC's subsidiary Silicon Carbide LLC. It has also entered a partnership with Nexperia to develop SiC power semiconductors.
Article translated by Samuel Howarth
