Micron Technology expects to kick off volume production of HBM3E memory at its factory site in Taiwan, which the memory chipmaker considers a hub for advanced packaging, in the first quarter of 2024.
According to Micron, its HBM memory devices are designed and developed in the US, with assistance from its Indian team. Front-end manufacturing is handled by its chip plant in Hiroshima, Japan, and Taiwan will join and become a substantial contributor to mass production in the future.
Micron stated that at this time, all HBM3E front-end products produced in Hiroshima are packaged in Taiwan. Over time, it is anticipated that Taiwan will emerge as the sole vertically integrated production base capable of conducting HBM manufacturing, inspection, assembly and testing. This will facilitate the acceleration of Micron's HBM sales and revenue share.
With a new facility at its DRAM fabrication plant in Taichung, central Taiwan coming online, Micron plans to use 1-beta DRAM process technology to kick off volume manufacturing of HBM3E memory. Advanced inspection, packaging, and testing capabilities have been integrated into the new facility, according to the company.
The remarks were made during the recent inauguration ceremony for a fourth facility at its Taichung DRAM plant. The new facility, capable of providing backend services, extends Micron's worldwide packaging and testing network, according to company CEO Sanjay Mehrotra.
Micron maintains backend facilities in China, Malaysia, and Singapore, in addition to Taiwan. In June 2023, the US memory vendor also announced plans to build a new DRAM and NAND flash assembly and test facility in Gujarat - the first in India. Phase 1 will begin operations in late 2024, with 500,000 square feet of planned cleanroom space, and Micron will steadily increase capacity over time in line with global demand trends.
Article translated by Jessie Shen
