中文網
Taipei
Mon, May 23, 2022
00:35
cloudy
23°C
CONNECT WITH US

Micron intros 176-layer NAND, 1α DRAM technology

Jessie Shen, DIGITIMES, Taipei 0

Micron Technology has unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as what the company claims is the industry's first Universal Flash Storage (UFS) 3.1 solution...

The article you are trying to open requires News database subscription. Please sign in if you wish to continue.
Companies
Related stories