Micron Technology has gradually scaled up production of DDR4 DRAM chips built using 1z-nanometer process technology at its factory site in central Taiwan, according to sources familiar with the matter.
Micron is ramping up 16Gb DDR4 chip output manufactured using 1znm process technology at its wafer fab in Taichung, said the sources, adding that the more-advanced process node was moved to risk production at Micron's Hiroshima fab in Japan last year.
Micron's Taichung factory site will be responsible for 1znm 16Gb DDR4 memory for desktop, notebook and datacenter applications, while the 1znm process manufacturing at its Hiroshima plant will focus on low-power memory products, the sources indicated.
Micron is also scheduled to complete constructing new cleanroom facilities at its Taichung factory site for the development of future technologies, the sources noted. The site is expected to play a key role in Micron's DRAM process technology advances.
Meanwhile, at its factory site in Taoyuan, northern Taiwan, Micron has kicked off volume production of 1ynm DRAM memory, the sources continued.
Taiwan is already an important manufacturing site of Micron, KC Hsu, chairman for Micron Memory Taiwan, was quoted as saying in previous reports. The US memory chip vendor has also built a fully-automated backend plant in Taichung to provide high-end services such as those for 3D IC integration for the production of DRAM chips.
Micron reportedly is initiating the sampling of universal flash storage (UFS) multichip package (uMCP) with low-power DDR5 (LPDDR5) DRAM at its backend facility in Taichung. Micron's uMCP5 uses 1y nm DRAM process technology and 512Gb 96L 3D NAND die, and is designed for midrange 5G smartphones.
Article translated by Jessie Shen
