中文網
Taipei
Thu, Jan 27, 2022
23:25
light rain
20°C
CONNECT WITH US

IDMs revving up production of GaN, SiC devices for 5G applications

Julian Ho, Taipei; Willis Ke, DIGITIMES 0

High-performance RF components and power devices made of third-generation compound semiconductor materials with wide band-gap, such as GaN and SiC, are expected to be increasingly demanded for extensive applications in the 5G era, prompting international...

The article you are trying to open requires News database subscription. Please sign in if you wish to continue.
Related stories