中文網
Taipei
Sun, Nov 27, 2022
22:58
mostly clear
23°C
CONNECT WITH US

IDMs keen to develop advanced power devices with SiC, GaN

Julian Ho, Taipei; Willis Ke, DIGITIMES Asia 0

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC) and gallium nitride (GaN), seeking to secure a preemptive presence...

The premium content you are trying to open requires News database subscription. Please sign in if you wish to continue.
Related stories
Global wafer foundry industry analysis and forecast, 2022
DIGITIMES Research Special Report Databases