Bits + chips
IDMs keen to develop advanced power devices with SiC, GaN
Julian Ho, Taipei; Willis Ke, DIGITIMES

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC) and gallium nitride (GaN), seeking to secure a preemptive presence...

The article you are trying to open requires News database subscription. Please sign in if you wish to continue.
Realtime news
© 2020 DIGITIMES Inc. All rights reserved.
Please do not republish, publicly broadcast or publicly transmit content from this website without written permission from DIGITIMES Inc. Please contact us if you have any questions.