Samsung announces mass production of 256Gb, 3D V-NAND flash memory

Home Tech Chips + Components

Press release; Jessie Shen, DIGITIMES Wednesday 12 August 2015 0

Samsung Electronics has begun mass producing 256Gb, three-dimensional (3D) vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs), according to the company.

The article you are trying to open requires News database subscription. Please sign in if you wish to continue.

Email address

Passwords

Save my User ID and Password

Save my User ID and Password

Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each time they visit the site. To activate this function, check the 'Save my User ID and Password' box in the log-in section. This will save the password on the computer you're using to access the site.

Note: If you choose to use the log-out feature, you will lose your saved information. This means you will be required to log-in the next time you visit our site.

NEW individual users please REGISTER first.

Enterprise user first-time LOGIN.

I forgot my ID and/or password?

MEMBERSHIP BENEFITS

Full access to articles dating back to 2000.
Real-time access to the news as it breaks.
Access to premium content.
Full access to Before Going to Press.
Asia Supply Chain 100 dataset access.
Access to research insights.