DRAM contract prices edged up 1-2% in the first half of December, ending about five months of decreases, according to DRAMeXchange. A recent rally in spot prices has helped to lift contract prices, the price tracker indicated.
Early December contract quotes for 2GB and 4GB DDR3 modules averaged US$8.90 and US$15.50, respectively, up 1.7% and 1.6%, DRAMeXchange disclosed. Average prices for 2Gb chips came to US$0.81 during the period, rising 1.25%.
Slow growth on the supply side has led to a rebound in DRAM prices at the spot market, said DRAMeXchange, adding that some product categories are already in tight supply. With chipmakers continuing to monitor and control their output, the overall supply-demand balance is expected to further improve.
In addition, chipmakers including the industry leader Samsung Electronics will be cautious in their capex allocation for the commodity DRAM business in 2013, and make slow progress in transitioning to newer process technology, DRAMeXchange said. The mainstream production node for DRAM will likely remain 3Xnm, DRAMeXchange noted.
DRAMeXchange also predicted that the global DRAM chipmakers' combined capex in 2013 will be about 21% less than the level reached in 2012.
