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Home Tech Semiconductors

Cree demonstrates 400W of RF power for GaN S-band transistor

Press release, June 14

Jun 14, 2006, 10:54 0

Cree on June 13 announced that it has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications...

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EDOM Accelerates Edge AI Deployment with NVIDIA Technologies

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