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Worldwide DRAM output grew 55.6% on-year in 2003, says DRAMeXchange

Hans Wu, Taipei
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Worldwide DRAM output reached 2.933 billion 256Mbit-equivalent units in 2003, up 55.6% year-on-year, said analysts at DRAMeXchange.

Among the five key DRAM supplying countries, Taiwan posted the strongest growth rate–105% growth year-on-year – in 2003, as the country now possesses the world’s biggest cluster of 12-inch DRAM fabs.

The sluggish economy in 2003 has depressed the DRAM demand growth and resulted in a mild over-supply, making some DRAM makers such as Winbond Electronics and Nanya Technology to post year-on-year drop in 2003 sales, the analysts said.

DRAM output is expected to grow at an even slower pace, with 47% year-on-year growth rate, this year, according to DRAMeXchange.

The increasing capacity allocation to NAND flash, non-commodity DRAM and logic IC production, the slow-down in 12-inch wafer starts, and limited contribution from the 0.11-micron ramp and the additional 12-inch wafer starts, will be the reasons behind the slow unit growth, DRAMeXchange suggested.

2002-2004: Worldwide DRAM output (256Mbit-equivalent, million units)

 

2002

Y/Y

2003

Y/Y

2004 (f)

Y/Y (f)

US

348.3

27.5%

460.2

32.1%

678.0

47.3%

Korea

871.5

85.6%

1,319.7

51.4%

1,823.5

38.2%

Germany

259.4

54.2%

465.5

79.5%

703.0

51.0%

Japan

118.6

(46.1%)

97.9

(17.5%)

247.0

152.3%

Taiwan

287.2

45.4%

589.6

105.3%

856.1

45.2%

Total

1,885.1

41.9%

2,933.0

55.6%

4,307.6

46.9%

Source: DRAMeXchange, compiled by DigiTimes, January 2004.

Article translated by Jack Lu and edited by Jack Lu